Low-dielectric Constant MaterialsMaterials Research Society, 1999 - Electric insulators and insulation |
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Page 118
... heating , and mass spectra were recorded at each 50 ° C increment . It is worth noting that significant out - gassing from sample holder and the heating stage is observed , with H2O , CO , CO2 , and C desorbed and detected by the mass ...
... heating , and mass spectra were recorded at each 50 ° C increment . It is worth noting that significant out - gassing from sample holder and the heating stage is observed , with H2O , CO , CO2 , and C desorbed and detected by the mass ...
Page 119
... heating . The relative photoemission intensity of C - F , to C - C decreased significantly after heating the sample to 450 ° C , and the fluorine to carbon ratio decreased from 1.3 to 1.1 . However , CF , CF2 , and CF3 all seem to ...
... heating . The relative photoemission intensity of C - F , to C - C decreased significantly after heating the sample to 450 ° C , and the fluorine to carbon ratio decreased from 1.3 to 1.1 . However , CF , CF2 , and CF3 all seem to ...
Page 298
... heating stage , using Cu Ka radiation ( λ : 1.5406 Å ) . For high temperature measurements , a heating and cooling rate of 2 ° C / min . was used for all samples . Multiple scans were performed for each temperature and summed in order ...
... heating stage , using Cu Ka radiation ( λ : 1.5406 Å ) . For high temperature measurements , a heating and cooling rate of 2 ° C / min . was used for all samples . Multiple scans were performed for each temperature and summed in order ...
Contents
Porous Organosilicates for OnChip Dielectric Applications | 3 |
A New LowDielectric Constant Polymer Material K | 17 |
Wave Polymerization During Vapor Deposition of Porous | 23 |
Copyright | |
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1999 Materials Research a-C:F film a-CN absorption adhesion promoter adsorption annealing as-deposited atoms barrier capacitance capacitors carbon chemical cm¹ Constant Materials curing temperature damascene debond decrease deposition rate device dielectric constant diffusion electrical Electron ellipsometry etching film expansion film thickness films deposited FLAC fluorine FOx films FTIR gate heating increase integration interface layer leakage current low dielectric constant low-k low-k materials Materials Research Society measured metal modulus moisture MSSQ nitride nitrogen oxide peak PECVD plasma treatment polarization polyimide polymer polymerization pore porogen porosity porous film PPSZ Proc ratio reduced refractive index resistance sample sccm Semiconductor shown in Figure shows Si-H bonds Si-O Si-O-Si SiCOH silica silicon silicon dioxide silsesquioxane SiO:F SiO2 SiOF films spectra spin coating sputtering stress substrate surface Symp Technology TEOS thermal conductivity thin films Torr voltage wafer xerogel xerogel films