Low-dielectric Constant MaterialsMaterials Research Society, 1999 - Electric insulators and insulation |
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Page 109
... higher wave numbers , indicative of the existence of an additional type of structural configuration for this bond in the random covalent network of Si and O in the film . It can be seen in Figure 1 that the intensities of the C - H and ...
... higher wave numbers , indicative of the existence of an additional type of structural configuration for this bond in the random covalent network of Si and O in the film . It can be seen in Figure 1 that the intensities of the C - H and ...
Page 111
... higher velocities correspond to films deposited at higher rf powers . These velocities should be compared to crack velocities of up to 103 m / s measured for 1 μm thick low - k polymeric films , such as HSSQ or MSSQ ( having similar ...
... higher velocities correspond to films deposited at higher rf powers . These velocities should be compared to crack velocities of up to 103 m / s measured for 1 μm thick low - k polymeric films , such as HSSQ or MSSQ ( having similar ...
Page 235
... higher F - content in the films , however , it seems to be difficult practically to obtain films with F - content higher than 12 % at 300 ° C by increasing further TFAA or CF4 flow rate because of low - deposition rate of about 2 nm ...
... higher F - content in the films , however , it seems to be difficult practically to obtain films with F - content higher than 12 % at 300 ° C by increasing further TFAA or CF4 flow rate because of low - deposition rate of about 2 nm ...
Contents
Porous Organosilicates for OnChip Dielectric Applications | 3 |
A New LowDielectric Constant Polymer Material K | 17 |
Wave Polymerization During Vapor Deposition of Porous | 23 |
Copyright | |
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1999 Materials Research a-C:F film a-CN absorption adhesion promoter adsorption annealing as-deposited atoms barrier capacitance capacitors carbon chemical cm¹ Constant Materials curing temperature damascene debond decrease deposition rate device dielectric constant diffusion electrical Electron ellipsometry etching film expansion film thickness films deposited FLAC fluorine FOx films FTIR gate heating increase integration interface layer leakage current low dielectric constant low-k low-k materials Materials Research Society measured metal modulus moisture MSSQ nitride nitrogen oxide peak PECVD plasma treatment polarization polyimide polymer polymerization pore porogen porosity porous film PPSZ Proc ratio reduced refractive index resistance sample sccm Semiconductor shown in Figure shows Si-H bonds Si-O Si-O-Si SiCOH silica silicon silicon dioxide silsesquioxane SiO:F SiO2 SiOF films spectra spin coating sputtering stress substrate surface Symp Technology TEOS thermal conductivity thin films Torr voltage wafer xerogel xerogel films