Low-dielectric Constant MaterialsMaterials Research Society, 1999 - Electric insulators and insulation |
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Page 129
... integration process of CVD Cu with low - k fluorinated amorphous carbon ( a - F : C ) in single level and multilevel damascene structure . A thin layer of adhesion promoter material , SiC : H , was utilized to enhance the adhesion and ...
... integration process of CVD Cu with low - k fluorinated amorphous carbon ( a - F : C ) in single level and multilevel damascene structure . A thin layer of adhesion promoter material , SiC : H , was utilized to enhance the adhesion and ...
Page 137
INTEGRATION OF LOW DIELECTRIC CONSTANT MATERIALS IN ADVANCED ALUMINUM AND COPPER INTERCONNECTS Bin Zhao and Maureen Brongo Conexant Systems 4311 Jamboree Road , Newport Beach , CA 92660 Abstract Advanced on - chip interconnects using ...
INTEGRATION OF LOW DIELECTRIC CONSTANT MATERIALS IN ADVANCED ALUMINUM AND COPPER INTERCONNECTS Bin Zhao and Maureen Brongo Conexant Systems 4311 Jamboree Road , Newport Beach , CA 92660 Abstract Advanced on - chip interconnects using ...
Page 152
... integration scheme needed for successful integration . The necessity of additional dielectric layers , such as nitride based etch stop layers ( ESL ) and hardmask layers or optional sidewall oxide liners , shown in Figure 2 , increases ...
... integration scheme needed for successful integration . The necessity of additional dielectric layers , such as nitride based etch stop layers ( ESL ) and hardmask layers or optional sidewall oxide liners , shown in Figure 2 , increases ...
Contents
Porous Organosilicates for OnChip Dielectric Applications | 3 |
A New LowDielectric Constant Polymer Material K | 17 |
Wave Polymerization During Vapor Deposition of Porous | 23 |
Copyright | |
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1999 Materials Research a-C:F film a-CN absorption adhesion promoter adsorption annealing as-deposited atoms barrier capacitance capacitors carbon chemical cm¹ Constant Materials curing temperature damascene debond decrease deposition rate device dielectric constant diffusion electrical Electron ellipsometry etching film expansion film thickness films deposited FLAC fluorine FOx films FTIR gate heating increase integration interface layer leakage current low dielectric constant low-k low-k materials Materials Research Society measured metal modulus moisture MSSQ nitride nitrogen oxide peak PECVD plasma treatment polarization polyimide polymer polymerization pore porogen porosity porous film PPSZ Proc ratio reduced refractive index resistance sample sccm Semiconductor shown in Figure shows Si-H bonds Si-O Si-O-Si SiCOH silica silicon silicon dioxide silsesquioxane SiO:F SiO2 SiOF films spectra spin coating sputtering stress substrate surface Symp Technology TEOS thermal conductivity thin films Torr voltage wafer xerogel xerogel films