Low-dielectric Constant MaterialsMaterials Research Society, 1999 - Electric insulators and insulation |
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Page 75
... lower the dielectric constant of materials that are stronger than organic polymers , but that don't have the required k value . This is one way to view the development of the silica - based spin - on glass and CVD films . The idea is to ...
... lower the dielectric constant of materials that are stronger than organic polymers , but that don't have the required k value . This is one way to view the development of the silica - based spin - on glass and CVD films . The idea is to ...
Page 273
... lower dielectric constant of hydrogen silsesquioxane ( HSQ ) . While widely used in production of integrated circuits ( ICs ) with device features of 0.25 - 0.5 μm , HSQ has minimum k capability of ≈ 2.9 when processed by conventional ...
... lower dielectric constant of hydrogen silsesquioxane ( HSQ ) . While widely used in production of integrated circuits ( ICs ) with device features of 0.25 - 0.5 μm , HSQ has minimum k capability of ≈ 2.9 when processed by conventional ...
Page 298
... lower temperature ( 253-254 ° C ) in the cooling cycles . The differing positions in the heating and cooling cycles suggests a kinetically slow transition . The small irreversible feature near 250 ° C in the first heating cycle could be ...
... lower temperature ( 253-254 ° C ) in the cooling cycles . The differing positions in the heating and cooling cycles suggests a kinetically slow transition . The small irreversible feature near 250 ° C in the first heating cycle could be ...
Contents
Porous Organosilicates for OnChip Dielectric Applications | 3 |
A New LowDielectric Constant Polymer Material K | 17 |
Wave Polymerization During Vapor Deposition of Porous | 23 |
Copyright | |
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1999 Materials Research a-C:F film a-CN absorption adhesion promoter adsorption annealing as-deposited atoms barrier capacitance capacitors carbon chemical cm¹ Constant Materials curing temperature damascene debond decrease deposition rate device dielectric constant diffusion electrical Electron ellipsometry etching film expansion film thickness films deposited FLAC fluorine FOx films FTIR gate heating increase integration interface layer leakage current low dielectric constant low-k low-k materials Materials Research Society measured metal modulus moisture MSSQ nitride nitrogen oxide peak PECVD plasma treatment polarization polyimide polymer polymerization pore porogen porosity porous film PPSZ Proc ratio reduced refractive index resistance sample sccm Semiconductor shown in Figure shows Si-H bonds Si-O Si-O-Si SiCOH silica silicon silicon dioxide silsesquioxane SiO:F SiO2 SiOF films spectra spin coating sputtering stress substrate surface Symp Technology TEOS thermal conductivity thin films Torr voltage wafer xerogel xerogel films