Low-dielectric Constant MaterialsMaterials Research Society, 1999 - Electric insulators and insulation |
From inside the book
Results 1-3 of 72
Page 101
... metal structures ( comb - type capacitors ) submitted to moisture stress . A large increase of leakage current ( > 105 ) and capacitance ( up to × 3 ) is observed after moisture stress when only FOX is used as lateral dielectric , while ...
... metal structures ( comb - type capacitors ) submitted to moisture stress . A large increase of leakage current ( > 105 ) and capacitance ( up to × 3 ) is observed after moisture stress when only FOX is used as lateral dielectric , while ...
Page 105
... metal pads ( 3 metal levels with FOX IMD ) highlighting hair - line cracks and deformation of via lines . No similar effect is observed when HDP oxide or FOX + liner is used with the same pad structure . passivation oxide metal 3 TEOS ...
... metal pads ( 3 metal levels with FOX IMD ) highlighting hair - line cracks and deformation of via lines . No similar effect is observed when HDP oxide or FOX + liner is used with the same pad structure . passivation oxide metal 3 TEOS ...
Page 143
process shifts the processing focus from metal etch and dielectric gapfill to metal deposition ( via / trench fill ) and metal chemical - mechanical - polishing ( CMP ) . One significant benefit of this shift is that it enables use of ...
process shifts the processing focus from metal etch and dielectric gapfill to metal deposition ( via / trench fill ) and metal chemical - mechanical - polishing ( CMP ) . One significant benefit of this shift is that it enables use of ...
Contents
Porous Organosilicates for OnChip Dielectric Applications | 3 |
A New LowDielectric Constant Polymer Material K | 17 |
Wave Polymerization During Vapor Deposition of Porous | 23 |
Copyright | |
35 other sections not shown
Other editions - View all
Common terms and phrases
1999 Materials Research a-C:F film a-CN absorption adhesion promoter adsorption annealing as-deposited atoms barrier capacitance capacitors carbon chemical cm¹ Constant Materials curing temperature damascene debond decrease deposition rate device dielectric constant diffusion electrical Electron ellipsometry etching film expansion film thickness films deposited FLAC fluorine FOx films FTIR gate heating increase integration interface layer leakage current low dielectric constant low-k low-k materials Materials Research Society measured metal modulus moisture MSSQ nitride nitrogen oxide peak PECVD plasma treatment polarization polyimide polymer polymerization pore porogen porosity porous film PPSZ Proc ratio reduced refractive index resistance sample sccm Semiconductor shown in Figure shows Si-H bonds Si-O Si-O-Si SiCOH silica silicon silicon dioxide silsesquioxane SiO:F SiO2 SiOF films spectra spin coating sputtering stress substrate surface Symp Technology TEOS thermal conductivity thin films Torr voltage wafer xerogel xerogel films