Low-dielectric Constant MaterialsMaterials Research Society, 1999 - Electric insulators and insulation |
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Page 101
... metal structures ( comb - type capacitors ) submitted to moisture stress . A large increase of leakage current ( > 105 ) and capacitance ( up to × 3 ) is observed after moisture stress when only FOX is used as lateral dielectric , while ...
... metal structures ( comb - type capacitors ) submitted to moisture stress . A large increase of leakage current ( > 105 ) and capacitance ( up to × 3 ) is observed after moisture stress when only FOX is used as lateral dielectric , while ...
Page 105
... metal pads ( 3 metal levels with FOX IMD ) highlighting hair - line cracks and deformation of via lines . No similar effect is observed when HDP oxide or FOX + liner is used with the same pad structure . passivation oxide metal 3 TEOS ...
... metal pads ( 3 metal levels with FOX IMD ) highlighting hair - line cracks and deformation of via lines . No similar effect is observed when HDP oxide or FOX + liner is used with the same pad structure . passivation oxide metal 3 TEOS ...
Page 143
process shifts the processing focus from metal etch and dielectric gapfill to metal deposition ( via / trench fill ) and metal chemical - mechanical - polishing ( CMP ) . One significant benefit of this shift is that it enables use of ...
process shifts the processing focus from metal etch and dielectric gapfill to metal deposition ( via / trench fill ) and metal chemical - mechanical - polishing ( CMP ) . One significant benefit of this shift is that it enables use of ...
Contents
Porous Organosilicates for OnChip Dielectric Applications | 3 |
A New LowDielectric Constant Polymer Material K | 17 |
Wave Polymerization During Vapor Deposition of Porous | 23 |
Copyright | |
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1999 Materials Research a-C:F film absorption adsorbate adsorption annealing as-deposited atoms barrier calculated capacitance capacitors carbon chemical cm¹ Constant Materials damascene structure debond growth decrease density devices dielectric constant diffusion dual damascene interconnect Electron ellipsometry etch fabricated Figure film thickness films deposited fluorine FOx films FTIR increase integration interface layer leakage current low dielectric constant low-k low-k materials Materials Research Society measured modulus moisture moisture stress nitride oxide peak PECVD plasma treatment polyimide polymer polymerization pore porosity porous film Proc ratio reduced refractive index resistance sample sccm Semiconductor shown in Fig shows Si-H bonds Si-O Si-O-Si SiC:H SiCOH films silica silicon silicon dioxide SiO:F SiO2 SiOF films spectra spin coating sputtering stress substrate surface Symp tantalum nitride Technology TEOS thermal conductivity thermal stability thin films Torr ULSI voltage wafer xerogel xerogel films