Low-dielectric Constant MaterialsMaterials Research Society, 1999 - Electric insulators and insulation |
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Page 119
... observed for a sample with 38 at . % fluorine , as evidenced by less defluorination of the film observed in the C ( 1s ) XPS spectra after heating and much less CF , desorption as indicated in the mass spectra upon heating . This film ...
... observed for a sample with 38 at . % fluorine , as evidenced by less defluorination of the film observed in the C ( 1s ) XPS spectra after heating and much less CF , desorption as indicated in the mass spectra upon heating . This film ...
Page 144
... observed in the Cu / low - k dual damascene interconnect . About 20 % intra - level capacitance reduction and 30 % inter - level capacitance reduction have been observed in the Cu / low - к dual damascene interconnect in comparison to ...
... observed in the Cu / low - k dual damascene interconnect . About 20 % intra - level capacitance reduction and 30 % inter - level capacitance reduction have been observed in the Cu / low - к dual damascene interconnect in comparison to ...
Page 182
... observed in corresponding Al capacitors . Typical TDDB results are shown in Figure 10 ( a ) . The failure times for the six tested polymers are compared in Figure 10 ( b ) . Furthermore , as shown in Figure 11 , there is a reasonable ...
... observed in corresponding Al capacitors . Typical TDDB results are shown in Figure 10 ( a ) . The failure times for the six tested polymers are compared in Figure 10 ( b ) . Furthermore , as shown in Figure 11 , there is a reasonable ...
Contents
Porous Organosilicates for OnChip Dielectric Applications | 3 |
A New LowDielectric Constant Polymer Material K | 17 |
Wave Polymerization During Vapor Deposition of Porous | 23 |
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1999 Materials Research a-C:F film a-CN absorption adhesion promoter adsorption annealing as-deposited atoms barrier capacitance capacitors carbon chemical cm¹ Constant Materials curing temperature damascene debond decrease deposition rate device dielectric constant diffusion electrical Electron ellipsometry etching film expansion film thickness films deposited FLAC fluorine FOx films FTIR gate heating increase integration interface layer leakage current low dielectric constant low-k low-k materials Materials Research Society measured metal modulus moisture MSSQ nitride nitrogen oxide peak PECVD plasma treatment polarization polyimide polymer polymerization pore porogen porosity porous film PPSZ Proc ratio reduced refractive index resistance sample sccm Semiconductor shown in Figure shows Si-H bonds Si-O Si-O-Si SiCOH silica silicon silicon dioxide silsesquioxane SiO:F SiO2 SiOF films spectra spin coating sputtering stress substrate surface Symp Technology TEOS thermal conductivity thin films Torr voltage wafer xerogel xerogel films