Low-dielectric Constant MaterialsMaterials Research Society, 1999 - Electric insulators and insulation |
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Page 41
... obtained films , cured at 400 ° C in N2 atmosphere , exhibit dielectric constants as low as 1.6 which do not change after holding the wafers in a clean - room ambient for 2 months . Cross - sectional SEM images of the cured films show ...
... obtained films , cured at 400 ° C in N2 atmosphere , exhibit dielectric constants as low as 1.6 which do not change after holding the wafers in a clean - room ambient for 2 months . Cross - sectional SEM images of the cured films show ...
Page 42
... obtaining porous silica films from PPSZ precursor solution . After depositing the PPSZ solution on substrates by spin ... obtained using Hitachi's FE - SEM S - 800 . TDS ( Thermal Desorption Spectroscopy ) analysis was carried out upon ...
... obtaining porous silica films from PPSZ precursor solution . After depositing the PPSZ solution on substrates by spin ... obtained using Hitachi's FE - SEM S - 800 . TDS ( Thermal Desorption Spectroscopy ) analysis was carried out upon ...
Page 258
... obtained from CV measurement , the results of Kramers - Kronig relation and the square of refractive index [ 8 ] . It shows that the decrease in the dielectric constant to 2.6 Total polarizability ( real part ) UHF to microwaves O ...
... obtained from CV measurement , the results of Kramers - Kronig relation and the square of refractive index [ 8 ] . It shows that the decrease in the dielectric constant to 2.6 Total polarizability ( real part ) UHF to microwaves O ...
Contents
Porous Organosilicates for OnChip Dielectric Applications | 3 |
A New LowDielectric Constant Polymer Material K | 17 |
Wave Polymerization During Vapor Deposition of Porous | 23 |
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1999 Materials Research a-C:F film a-CN absorption adhesion promoter adsorption annealing as-deposited atoms barrier capacitance capacitors carbon chemical cm¹ Constant Materials curing temperature damascene debond decrease deposition rate device dielectric constant diffusion electrical Electron ellipsometry etching film expansion film thickness films deposited FLAC fluorine FOx films FTIR gate heating increase integration interface layer leakage current low dielectric constant low-k low-k materials Materials Research Society measured metal modulus moisture MSSQ nitride nitrogen oxide peak PECVD plasma treatment polarization polyimide polymer polymerization pore porogen porosity porous film PPSZ Proc ratio reduced refractive index resistance sample sccm Semiconductor shown in Figure shows Si-H bonds Si-O Si-O-Si SiCOH silica silicon silicon dioxide silsesquioxane SiO:F SiO2 SiOF films spectra spin coating sputtering stress substrate surface Symp Technology TEOS thermal conductivity thin films Torr voltage wafer xerogel xerogel films