Low-dielectric Constant MaterialsMaterials Research Society, 1999 - Electric insulators and insulation |
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Page 30
... performed from the time of addition of base catalyst ( t = 0 ) to gelation . Gelation is defined as the time at which an abrupt rise in viscosity occurs and which leads to a loss of fluidity in the material . Practically , a viscosity ...
... performed from the time of addition of base catalyst ( t = 0 ) to gelation . Gelation is defined as the time at which an abrupt rise in viscosity occurs and which leads to a loss of fluidity in the material . Practically , a viscosity ...
Page 108
... performed with " He * ions at 1.8 MeV and FRES was performed with " He * at 2.3 MeV in scanning mode , to reduce the potential damage effects of the He beam on the films . Fourrier Transform Infrared analysis ( FTIR ) was used to ...
... performed with " He * ions at 1.8 MeV and FRES was performed with " He * at 2.3 MeV in scanning mode , to reduce the potential damage effects of the He beam on the films . Fourrier Transform Infrared analysis ( FTIR ) was used to ...
Page 298
... performed on film samples of approximately 5-10 mg , which were prepared by scraping 1-5 μm thick films from Si wafers . The samples were taken through three cycles of heating and cooling at a ramp rate of 3 ° C / min . Stress ...
... performed on film samples of approximately 5-10 mg , which were prepared by scraping 1-5 μm thick films from Si wafers . The samples were taken through three cycles of heating and cooling at a ramp rate of 3 ° C / min . Stress ...
Contents
Porous Organosilicates for OnChip Dielectric Applications | 3 |
A New LowDielectric Constant Polymer Material K | 17 |
Wave Polymerization During Vapor Deposition of Porous | 23 |
Copyright | |
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1999 Materials Research a-C:F film a-CN absorption adhesion promoter adsorption annealing as-deposited atoms barrier capacitance capacitors carbon chemical cm¹ Constant Materials curing temperature damascene debond decrease deposition rate device dielectric constant diffusion electrical Electron ellipsometry etching film expansion film thickness films deposited FLAC fluorine FOx films FTIR gate heating increase integration interface layer leakage current low dielectric constant low-k low-k materials Materials Research Society measured metal modulus moisture MSSQ nitride nitrogen oxide peak PECVD plasma treatment polarization polyimide polymer polymerization pore porogen porosity porous film PPSZ Proc ratio reduced refractive index resistance sample sccm Semiconductor shown in Figure shows Si-H bonds Si-O Si-O-Si SiCOH silica silicon silicon dioxide silsesquioxane SiO:F SiO2 SiOF films spectra spin coating sputtering stress substrate surface Symp Technology TEOS thermal conductivity thin films Torr voltage wafer xerogel xerogel films