Low-dielectric Constant MaterialsMaterials Research Society, 1999 - Electric insulators and insulation |
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Page 95
... plasma treatment with plasma treatment dT / dt = 1C / sec F concentration ( at . % ) 14 Plasma treatment condition - microwave power : 700W 12 - substrate temperature : 300 ° C without plasma treatment with plasma treatment 10 ∞ 6 4 N ...
... plasma treatment with plasma treatment dT / dt = 1C / sec F concentration ( at . % ) 14 Plasma treatment condition - microwave power : 700W 12 - substrate temperature : 300 ° C without plasma treatment with plasma treatment 10 ∞ 6 4 N ...
Page 96
... plasma treatment . In the case of 1.0 gas flow ratio , the TDS analysis of SiOF films before and after the plasma treatment shows substantially different behavior . The SiOF film before the plasma treatment comes out with a sharp peak ...
... plasma treatment . In the case of 1.0 gas flow ratio , the TDS analysis of SiOF films before and after the plasma treatment shows substantially different behavior . The SiOF film before the plasma treatment comes out with a sharp peak ...
Page 97
... plasma treatment when exposed to air even for a few days . Furthermore , the improvement of the water absorption resistance of SiOF films by the post plasma treatment was confirmed in the Figs . 2 and 3 . Figure 4 shows the RBS spectra ...
... plasma treatment when exposed to air even for a few days . Furthermore , the improvement of the water absorption resistance of SiOF films by the post plasma treatment was confirmed in the Figs . 2 and 3 . Figure 4 shows the RBS spectra ...
Contents
Porous Organosilicates for OnChip Dielectric Applications | 3 |
A New LowDielectric Constant Polymer Material K | 17 |
Wave Polymerization During Vapor Deposition of Porous | 23 |
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1999 Materials Research a-C:F film a-CN absorption adhesion promoter adsorption annealing as-deposited atoms barrier capacitance capacitors carbon chemical cm¹ Constant Materials curing temperature damascene debond decrease deposition rate device dielectric constant diffusion electrical Electron ellipsometry etching film expansion film thickness films deposited FLAC fluorine FOx films FTIR gate heating increase integration interface layer leakage current low dielectric constant low-k low-k materials Materials Research Society measured metal modulus moisture MSSQ nitride nitrogen oxide peak PECVD plasma treatment polarization polyimide polymer polymerization pore porogen porosity porous film PPSZ Proc ratio reduced refractive index resistance sample sccm Semiconductor shown in Figure shows Si-H bonds Si-O Si-O-Si SiCOH silica silicon silicon dioxide silsesquioxane SiO:F SiO2 SiOF films spectra spin coating sputtering stress substrate surface Symp Technology TEOS thermal conductivity thin films Torr voltage wafer xerogel xerogel films