Low-dielectric Constant MaterialsMaterials Research Society, 1999 - Electric insulators and insulation |
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Page 5
... Polyimide - SSQ hybrids 2.7-3.0 Parylene - AF 4 2.3-2.5 Alkylsilanes / N 20 2.4-2.7 558858858588855 SO VD VD VD Ultra Low k Materials ( k≥2.2 ) Teflon - AF 1.9-2.1 Teflon - microemulsion 1.9-2.1 88 Porous Materials Polyimide nanofoams ...
... Polyimide - SSQ hybrids 2.7-3.0 Parylene - AF 4 2.3-2.5 Alkylsilanes / N 20 2.4-2.7 558858858588855 SO VD VD VD Ultra Low k Materials ( k≥2.2 ) Teflon - AF 1.9-2.1 Teflon - microemulsion 1.9-2.1 88 Porous Materials Polyimide nanofoams ...
Page 125
... Polyimide / SiO2 Interface System This epoxy / polyimide / silica interface system simulates a die attach structure and is of great interest for microelectronic packaging applications . Double cantilever beam ( DCB ) specimens were ...
... Polyimide / SiO2 Interface System This epoxy / polyimide / silica interface system simulates a die attach structure and is of great interest for microelectronic packaging applications . Double cantilever beam ( DCB ) specimens were ...
Page 126
... polyimide interface , rather than at the polyimide / silica interface . Further , under cyclic loading conditions , the debond was observed to kink into the silica - filled epoxy , and propagate Debond Growth Rate , da / dN ( m / 126.
... polyimide interface , rather than at the polyimide / silica interface . Further , under cyclic loading conditions , the debond was observed to kink into the silica - filled epoxy , and propagate Debond Growth Rate , da / dN ( m / 126.
Contents
Porous Organosilicates for OnChip Dielectric Applications | 3 |
A New LowDielectric Constant Polymer Material K | 17 |
Wave Polymerization During Vapor Deposition of Porous | 23 |
Copyright | |
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1999 Materials Research a-C:F film absorption adsorbate adsorption annealing as-deposited atoms barrier calculated capacitance capacitors carbon chemical cm¹ Constant Materials damascene structure debond growth decrease density devices dielectric constant diffusion dual damascene interconnect Electron ellipsometry etch fabricated Figure film thickness films deposited fluorine FOx films FTIR increase integration interface layer leakage current low dielectric constant low-k low-k materials Materials Research Society measured modulus moisture moisture stress nitride oxide peak PECVD plasma treatment polyimide polymer polymerization pore porosity porous film Proc ratio reduced refractive index resistance sample sccm Semiconductor shown in Fig shows Si-H bonds Si-O Si-O-Si SiC:H SiCOH films silica silicon silicon dioxide SiO:F SiO2 SiOF films spectra spin coating sputtering stress substrate surface Symp tantalum nitride Technology TEOS thermal conductivity thermal stability thin films Torr ULSI voltage wafer xerogel xerogel films