Low-dielectric Constant MaterialsMaterials Research Society, 1999 - Electric insulators and insulation |
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Page 63
... pore diameter range below 5nm . It is found that the dielectric constant and the pore diameter depended on the density and the film strength was affected by the average pore diameter . Practically , films with the average pore size ...
... pore diameter range below 5nm . It is found that the dielectric constant and the pore diameter depended on the density and the film strength was affected by the average pore diameter . Practically , films with the average pore size ...
Page 81
... pore size distribution in a thin porous film deposited on top of any solid substrate . The most important concept of this technique is the use of in - situ ellipsometry to determine the amount of adsorbate adsorbed / condensed in the ...
... pore size distribution in a thin porous film deposited on top of any solid substrate . The most important concept of this technique is the use of in - situ ellipsometry to determine the amount of adsorbate adsorbed / condensed in the ...
Page 85
... Pore radii ( nm ) Pore radii ( nm ) Figure 3. Pore size distributions calculated from desorption ( a ) and adsorption ( b ) curves . These data were used for the PSD calculations ( Figure 3 ) . One can see that the all three adsorbates ...
... Pore radii ( nm ) Pore radii ( nm ) Figure 3. Pore size distributions calculated from desorption ( a ) and adsorption ( b ) curves . These data were used for the PSD calculations ( Figure 3 ) . One can see that the all three adsorbates ...
Contents
Porous Organosilicates for OnChip Dielectric Applications | 3 |
A New LowDielectric Constant Polymer Material K | 17 |
Wave Polymerization During Vapor Deposition of Porous | 23 |
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1999 Materials Research a-C:F film a-CN absorption adhesion promoter adsorption annealing as-deposited atoms barrier capacitance capacitors carbon chemical cm¹ Constant Materials curing temperature damascene debond decrease deposition rate device dielectric constant diffusion electrical Electron ellipsometry etching film expansion film thickness films deposited FLAC fluorine FOx films FTIR gate heating increase integration interface layer leakage current low dielectric constant low-k low-k materials Materials Research Society measured metal modulus moisture MSSQ nitride nitrogen oxide peak PECVD plasma treatment polarization polyimide polymer polymerization pore porogen porosity porous film PPSZ Proc ratio reduced refractive index resistance sample sccm Semiconductor shown in Figure shows Si-H bonds Si-O Si-O-Si SiCOH silica silicon silicon dioxide silsesquioxane SiO:F SiO2 SiOF films spectra spin coating sputtering stress substrate surface Symp Technology TEOS thermal conductivity thin films Torr voltage wafer xerogel xerogel films