Low-dielectric Constant MaterialsMaterials Research Society, 1999 - Electric insulators and insulation |
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Page 34
... strength of bulk aerogels prepared by supercritical drying values to be ~ 0.5 MV / cm . Jo and Park [ 26 ] studied breakdown behavior of supercritically dried silica aerogel films of 70 % porosity . The dielectric strength was found to ...
... strength of bulk aerogels prepared by supercritical drying values to be ~ 0.5 MV / cm . Jo and Park [ 26 ] studied breakdown behavior of supercritically dried silica aerogel films of 70 % porosity . The dielectric strength was found to ...
Page 65
... strength was larger than 70MPa for the samples whose density is larger than 0.7 while it decreases steeply below 0.7 . The strength data against the pore diameters are summarized in Figure 5. The film strength is affected by the pore ...
... strength was larger than 70MPa for the samples whose density is larger than 0.7 while it decreases steeply below 0.7 . The strength data against the pore diameters are summarized in Figure 5. The film strength is affected by the pore ...
Page 66
... strength . These results indicate that the practical dielectric constant , traded - off with the film strength and adhesion , can be improved to as low as 2.2 by controlling the pore diameter smaller than 5 nm . Stud - pull strength ...
... strength . These results indicate that the practical dielectric constant , traded - off with the film strength and adhesion , can be improved to as low as 2.2 by controlling the pore diameter smaller than 5 nm . Stud - pull strength ...
Contents
Porous Organosilicates for OnChip Dielectric Applications | 3 |
A New LowDielectric Constant Polymer Material K | 17 |
Wave Polymerization During Vapor Deposition of Porous | 23 |
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1999 Materials Research a-C:F film absorption adsorbate adsorption annealing as-deposited atoms barrier calculated capacitance capacitors carbon chemical cm¹ Constant Materials damascene structure debond growth decrease density devices dielectric constant diffusion dual damascene interconnect Electron ellipsometry etch fabricated Figure film thickness films deposited fluorine FOx films FTIR increase integration interface layer leakage current low dielectric constant low-k low-k materials Materials Research Society measured modulus moisture moisture stress nitride oxide peak PECVD plasma treatment polyimide polymer polymerization pore porosity porous film Proc ratio reduced refractive index resistance sample sccm Semiconductor shown in Fig shows Si-H bonds Si-O Si-O-Si SiC:H SiCOH films silica silicon silicon dioxide SiO:F SiO2 SiOF films spectra spin coating sputtering stress substrate surface Symp tantalum nitride Technology TEOS thermal conductivity thermal stability thin films Torr ULSI voltage wafer xerogel xerogel films