Low-dielectric Constant MaterialsMaterials Research Society, 1999 - Electric insulators and insulation |
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Page 129
... structures is proved to be feasible . Some of the electrical performance data evaluated on the Cu / a - F : C damascene structure will be also presented in this paper . INTRODUCTION Recent research and development on low dielectric ...
... structures is proved to be feasible . Some of the electrical performance data evaluated on the Cu / a - F : C damascene structure will be also presented in this paper . INTRODUCTION Recent research and development on low dielectric ...
Page 132
... structure to contain a - F : C and to prevent the diffusion of fluorine atoms into Si3N4 layer . II . Patterning and Plasma Etching After photoresist patterning on the damascene stacking layers , the SiO2 in trench lines is plasma ...
... structure to contain a - F : C and to prevent the diffusion of fluorine atoms into Si3N4 layer . II . Patterning and Plasma Etching After photoresist patterning on the damascene stacking layers , the SiO2 in trench lines is plasma ...
Page 227
... structure has air - gap between gate and data line intercrossing . This air - bridge TFT - LCD panel has very small amount of capacitance between gate and data line . The new panel structure achieves 9 times faster signal delay compared ...
... structure has air - gap between gate and data line intercrossing . This air - bridge TFT - LCD panel has very small amount of capacitance between gate and data line . The new panel structure achieves 9 times faster signal delay compared ...
Contents
Porous Organosilicates for OnChip Dielectric Applications | 3 |
A New LowDielectric Constant Polymer Material K | 17 |
Wave Polymerization During Vapor Deposition of Porous | 23 |
Copyright | |
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1999 Materials Research a-C:F film a-CN absorption adhesion promoter adsorption annealing as-deposited atoms barrier capacitance capacitors carbon chemical cm¹ Constant Materials curing temperature damascene debond decrease deposition rate device dielectric constant diffusion electrical Electron ellipsometry etching film expansion film thickness films deposited FLAC fluorine FOx films FTIR gate heating increase integration interface layer leakage current low dielectric constant low-k low-k materials Materials Research Society measured metal modulus moisture MSSQ nitride nitrogen oxide peak PECVD plasma treatment polarization polyimide polymer polymerization pore porogen porosity porous film PPSZ Proc ratio reduced refractive index resistance sample sccm Semiconductor shown in Figure shows Si-H bonds Si-O Si-O-Si SiCOH silica silicon silicon dioxide silsesquioxane SiO:F SiO2 SiOF films spectra spin coating sputtering stress substrate surface Symp Technology TEOS thermal conductivity thin films Torr voltage wafer xerogel xerogel films