Low-dielectric Constant MaterialsMaterials Research Society, 1999 - Electric insulators and insulation |
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Page 36
... Surface Modifier Solution 4 % TMCS 5 % TFPDMCS 0 30 40 50 60 70 80 90 100 2 4 6 8 % TMCS Porosity ( % ) Figure 8 Water absorption as a function of the degree of surface modification Figure 9 Water absorprtion as a function of porosity ...
... Surface Modifier Solution 4 % TMCS 5 % TFPDMCS 0 30 40 50 60 70 80 90 100 2 4 6 8 % TMCS Porosity ( % ) Figure 8 Water absorption as a function of the degree of surface modification Figure 9 Water absorprtion as a function of porosity ...
Page 126
... surface indicates the presence of BCB on the SiO2 surface , as shown by an enhanced carbon signal from the silica surface . Figure 3 shows a survey scan of the BCB and silica fracture surfaces along with a table of quantitative curve ...
... surface indicates the presence of BCB on the SiO2 surface , as shown by an enhanced carbon signal from the silica surface . Figure 3 shows a survey scan of the BCB and silica fracture surfaces along with a table of quantitative curve ...
Page 199
... surface . This suggests that fluorine is escaping from the edge of the sample . The fluorine NRA profile of the Al / TaN film on SiO : F showed fluorine at the aluminum surface for both the as - deposited and the sample annealed at 450 ...
... surface . This suggests that fluorine is escaping from the edge of the sample . The fluorine NRA profile of the Al / TaN film on SiO : F showed fluorine at the aluminum surface for both the as - deposited and the sample annealed at 450 ...
Contents
Porous Organosilicates for OnChip Dielectric Applications | 3 |
A New LowDielectric Constant Polymer Material K | 17 |
Wave Polymerization During Vapor Deposition of Porous | 23 |
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1999 Materials Research a-C:F film a-CN absorption adhesion promoter adsorption annealing as-deposited atoms barrier capacitance capacitors carbon chemical cm¹ Constant Materials curing temperature damascene debond decrease deposition rate device dielectric constant diffusion electrical Electron ellipsometry etching film expansion film thickness films deposited FLAC fluorine FOx films FTIR gate heating increase integration interface layer leakage current low dielectric constant low-k low-k materials Materials Research Society measured metal modulus moisture MSSQ nitride nitrogen oxide peak PECVD plasma treatment polarization polyimide polymer polymerization pore porogen porosity porous film PPSZ Proc ratio reduced refractive index resistance sample sccm Semiconductor shown in Figure shows Si-H bonds Si-O Si-O-Si SiCOH silica silicon silicon dioxide silsesquioxane SiO:F SiO2 SiOF films spectra spin coating sputtering stress substrate surface Symp Technology TEOS thermal conductivity thin films Torr voltage wafer xerogel xerogel films