Low-dielectric Constant MaterialsMaterials Research Society, 1999 - Electric insulators and insulation |
From inside the book
Results 1-3 of 79
Page 87
... thermal properties is required to assess the thermal performance of low dielectric constant materials . Recently we have developed a technique based on the 3 - omega method for measuring the thermal conductivity of porous dielectric ...
... thermal properties is required to assess the thermal performance of low dielectric constant materials . Recently we have developed a technique based on the 3 - omega method for measuring the thermal conductivity of porous dielectric ...
Page 89
... thermal conductivity of the thin film in Fig . 2 is derived as Kh th = t Rthlw ( 3 ) where w is the width of heater , I the length of heater , t the thickness of dielectric film . For a typical measurement of low thermal conductivity ...
... thermal conductivity of the thin film in Fig . 2 is derived as Kh th = t Rthlw ( 3 ) where w is the width of heater , I the length of heater , t the thickness of dielectric film . For a typical measurement of low thermal conductivity ...
Page 91
Thermal resistance ( ° C / W ) 30 25 20 15 10 5 Calculated Out - of - phase Calculated in - phase Experimental Out ... thermal conductivity of this film to be 0.250 ± 20 % W / ° Cm . Compared with fully dense fused silica , the density ...
Thermal resistance ( ° C / W ) 30 25 20 15 10 5 Calculated Out - of - phase Calculated in - phase Experimental Out ... thermal conductivity of this film to be 0.250 ± 20 % W / ° Cm . Compared with fully dense fused silica , the density ...
Contents
Porous Organosilicates for OnChip Dielectric Applications | 3 |
A New LowDielectric Constant Polymer Material K | 17 |
Wave Polymerization During Vapor Deposition of Porous | 23 |
Copyright | |
35 other sections not shown
Other editions - View all
Common terms and phrases
1999 Materials Research a-C:F film a-CN absorption adhesion promoter adsorption annealing as-deposited atoms barrier capacitance capacitors carbon chemical cm¹ Constant Materials curing temperature damascene debond decrease deposition rate device dielectric constant diffusion electrical Electron ellipsometry etching film expansion film thickness films deposited FLAC fluorine FOx films FTIR gate heating increase integration interface layer leakage current low dielectric constant low-k low-k materials Materials Research Society measured metal modulus moisture MSSQ nitride nitrogen oxide peak PECVD plasma treatment polarization polyimide polymer polymerization pore porogen porosity porous film PPSZ Proc ratio reduced refractive index resistance sample sccm Semiconductor shown in Figure shows Si-H bonds Si-O Si-O-Si SiCOH silica silicon silicon dioxide silsesquioxane SiO:F SiO2 SiOF films spectra spin coating sputtering stress substrate surface Symp Technology TEOS thermal conductivity thin films Torr voltage wafer xerogel xerogel films