Low-dielectric Constant MaterialsMaterials Research Society, 1999 - Electric insulators and insulation |
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Page 18
... thin films were measured by using an HP 4192A impedance analyzer with frequency of 1MHz and voltage 0.1V . Leakage current was measured from the test wafers with single metal layer interconnect structures . The metal stack of Ti ( 500Å ) ...
... thin films were measured by using an HP 4192A impedance analyzer with frequency of 1MHz and voltage 0.1V . Leakage current was measured from the test wafers with single metal layer interconnect structures . The metal stack of Ti ( 500Å ) ...
Page 18
... thin films were measured by using an HP 4192A impedance analyzer with frequency of 1MHz and voltage 0.1V . Leakage current was measured from the test wafers with single metal layer interconnect structures . The metal stack of Ti ( 500Å ) ...
... thin films were measured by using an HP 4192A impedance analyzer with frequency of 1MHz and voltage 0.1V . Leakage current was measured from the test wafers with single metal layer interconnect structures . The metal stack of Ti ( 500Å ) ...
Page 87
... thin films . In this paper we present the results on the measurements of thermal conductivity of thin porous films using this method . A finite element method analysis is used to evaluate the approximations used in the measurement . Two ...
... thin films . In this paper we present the results on the measurements of thermal conductivity of thin porous films using this method . A finite element method analysis is used to evaluate the approximations used in the measurement . Two ...
Contents
Porous Organosilicates for OnChip Dielectric Applications | 3 |
A New LowDielectric Constant Polymer Material K | 17 |
Wave Polymerization During Vapor Deposition of Porous | 23 |
Copyright | |
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1999 Materials Research a-C:F film absorption adsorbate adsorption annealing as-deposited atoms barrier calculated capacitance capacitors carbon chemical cm¹ Constant Materials damascene structure debond growth decrease density devices dielectric constant diffusion dual damascene interconnect Electron ellipsometry etch fabricated Figure film thickness films deposited fluorine FOx films FTIR increase integration interface layer leakage current low dielectric constant low-k low-k materials Materials Research Society measured modulus moisture moisture stress nitride oxide peak PECVD plasma treatment polyimide polymer polymerization pore porosity porous film Proc ratio reduced refractive index resistance sample sccm Semiconductor shown in Fig shows Si-H bonds Si-O Si-O-Si SiC:H SiCOH films silica silicon silicon dioxide SiO:F SiO2 SiOF films spectra spin coating sputtering stress substrate surface Symp tantalum nitride Technology TEOS thermal conductivity thermal stability thin films Torr ULSI voltage wafer xerogel xerogel films