Low-dielectric Constant MaterialsMaterials Research Society, 1999 - Electric insulators and insulation |
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Page 36
... xerogels ' highly porous structure , diffusion could be extremely rapid . A series of experiments were conducted here to study the extent and mechanism of Cu diffusion through our xerogel films . In all cases , Cu was deposited on the ...
... xerogels ' highly porous structure , diffusion could be extremely rapid . A series of experiments were conducted here to study the extent and mechanism of Cu diffusion through our xerogel films . In all cases , Cu was deposited on the ...
Page 38
... xerogel films ' etching was studied in CHF3 plasma . HDP etching of xerogel films was performed in an ICP reactor , the details of which are given in [ 33 ] . The plasma is generated by inductive coupling of rf power at 13.56 MHz ...
... xerogel films ' etching was studied in CHF3 plasma . HDP etching of xerogel films was performed in an ICP reactor , the details of which are given in [ 33 ] . The plasma is generated by inductive coupling of rf power at 13.56 MHz ...
Page 214
SiO2 xerogel SSA " ( mg ) Porosity ( % ) Average Pore size ( nm ) k calculated k measured ( electrically ) pH 6.1 529.11 54.7 3.2 2.32 2.25 PH 8 603.51 52.3 3.3 2.39 2.30 Table I. Characteristic data of SiO2 xerogel calcined at 250 ° C ...
SiO2 xerogel SSA " ( mg ) Porosity ( % ) Average Pore size ( nm ) k calculated k measured ( electrically ) pH 6.1 529.11 54.7 3.2 2.32 2.25 PH 8 603.51 52.3 3.3 2.39 2.30 Table I. Characteristic data of SiO2 xerogel calcined at 250 ° C ...
Contents
Porous Organosilicates for OnChip Dielectric Applications | 3 |
A New LowDielectric Constant Polymer Material K | 17 |
Wave Polymerization During Vapor Deposition of Porous | 23 |
Copyright | |
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1999 Materials Research a-C:F film absorption adsorbate adsorption annealing as-deposited atoms barrier calculated capacitance capacitors carbon chemical cm¹ Constant Materials damascene structure debond growth decrease density devices dielectric constant diffusion dual damascene interconnect Electron ellipsometry etch fabricated Figure film thickness films deposited fluorine FOx films FTIR increase integration interface layer leakage current low dielectric constant low-k low-k materials Materials Research Society measured modulus moisture moisture stress nitride oxide peak PECVD plasma treatment polyimide polymer polymerization pore porosity porous film Proc ratio reduced refractive index resistance sample sccm Semiconductor shown in Fig shows Si-H bonds Si-O Si-O-Si SiC:H SiCOH films silica silicon silicon dioxide SiO:F SiO2 SiOF films spectra spin coating sputtering stress substrate surface Symp tantalum nitride Technology TEOS thermal conductivity thermal stability thin films Torr ULSI voltage wafer xerogel xerogel films