Solid-State Physics: An Introduction to Principles of Materials ScienceOur German textbook "Festkdrperphysik" has become rather pop ular among German-speaking students, and is currently produced in its 4th edition. Its version in English has already been adopted by many universities in the United States and other countries. This new 2nd edition corresponds to the 4th edition in German. In addition to correcting some typographical errors and making small improvements in the presentation, in the present edition some chapters have been revised or extended. Panel V, for example, has been extended to include a description of angle-resolved photoemis sion and its importance for the study of electronic band structures. Section 10.10 on high-temperature superconductors has completely been rewritten. This active field of research continues to progress rapidly and many new results have emerged since the publication of the first edition. These results shed new light on much of the fun damental physics. The new version of Sect. 10.10 has been developed in discussions with colleagues who are themselves engaged in superconductivity research. We thank, in particular, Professor C. Calandra from the University of Modena and Dr. R. Wordenweber of the Institute of Thin Film and Ion Technology at the Research Centre Jiilich. The revision of the problems was done with the help of Dr. W. |
Contents
| 1 | |
Crystal Structures 2220 | 19 |
Problems | 33 |
Dynamics of Atoms in Crystals 65 | 64 |
Thermal Properties of Crystal Lattices | 83 |
Free Electrons in Solids | 105 |
The Electronic Bandstructure of Solids 129 | 128 |
Magnetism | 155 |
Motion of Electrons and Transport Phenomena | 191 |
Superconductivity | 221 |
Dielectric Properties of Materials | 287 |
Semiconductors | 327 |
References | 389 |
| 398 | |
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Common terms and phrases
absorption approximation atoms axis band gap bandstructure BCS ground BCS theory beam behavior bonding Brillouin zone Calculate carriers charge concentration conduction band constant Cooper pairs corresponding crystal dependence derived described determined dielectric diffraction dipole donors doped elec electric field energy levels excitation experimental external field Fermi energy Fermi level Fermi surface flux frequency function GaAs gap energy integral interaction ionic ionized ions k-space lattice vector layer linear low temperatures magnetic field measured metals molecule nearest neighbors neutron normal obtain occupied one-electron optical orbitals oscillator p-n junction Panel particles perpendicular phase phonon Phys plane polarization position potential quantum radiation reciprocal lattice region result sample scattering Schematic Schrödinger equation Sect semiconductor shown in Fig so-called solid space-charge zone spatial specific heat spectrum spin waves Springer structure superconducting symmetry tion transition trons tunnel unit cell valence band velocity voltage wave vector wavefunction X-ray