Thin Film Processes, Volume 1John L. Vossen, Werner Kern Remarkable advances have been made in recent years in the science and technology of thin film processes for deposition and etching. It is the purpose of this book to bring together tutorial reviews of selected filmdeposition and etching processes from a process viewpoint. Emphasis is placed on the practical use of the processes to provide working guidelines for their implementation, a guide to the literature, and an overview of each process. |
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Page 148
... a wide plasma region with a min- imum end radius . Linear motion makes optimum use of the high - rate capability of the rectangular magnetron source by allowing minimum source - substrate spacing and maximum throughput . All substrate ...
... a wide plasma region with a min- imum end radius . Linear motion makes optimum use of the high - rate capability of the rectangular magnetron source by allowing minimum source - substrate spacing and maximum throughput . All substrate ...
Page 420
John L. Vossen, Werner Kern. ETCH RATE ( A / MIN ) 1500 1000 500 1 1 2 1 5 MOLE % AS203 IN GLASS Fig . 5. Etch rates at 26 ° ± 1 ° C of heat - treated arsenosilicate glass films in BHF versus mole percent As2O , in the glass . Etching ...
John L. Vossen, Werner Kern. ETCH RATE ( A / MIN ) 1500 1000 500 1 1 2 1 5 MOLE % AS203 IN GLASS Fig . 5. Etch rates at 26 ° ± 1 ° C of heat - treated arsenosilicate glass films in BHF versus mole percent As2O , in the glass . Etching ...
Page 519
... an ion beam system [ 46 ] and in Fig . 9b for an rf sput- 2 ETCHING RATE ( A / MIN ) 450 300 150 --- O 10-6 2000 1600 1200 SPUTTER ETCH RATE ( Å / MIN ) 800 400 5 10 ( a ) 0-0- OXYGEN PARTIAL PRESSURE ( Torr ) Pt Au Ni Ti 100 80 60 40 ...
... an ion beam system [ 46 ] and in Fig . 9b for an rf sput- 2 ETCHING RATE ( A / MIN ) 450 300 150 --- O 10-6 2000 1600 1200 SPUTTER ETCH RATE ( Å / MIN ) 800 400 5 10 ( a ) 0-0- OXYGEN PARTIAL PRESSURE ( Torr ) Pt Au Ni Ti 100 80 60 40 ...
Contents
J J CUOMO 11 IBM Thomas J Watson Research Center Yorktown | 11 |
ix | 75 |
FREDERICK A LOWENHEIM 209 637 West 7th Street Plainfield | 115 |
Copyright | |
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Å/min alloys Amorphous anode Appl argon atoms bias cathode Chem chemical coatings composition compounds current density deposition rate dielectric discharge power effect electric Electrochem electron electroplating energy Epitaxial etch rate etchants etching processes film deposition flow rate GaAs gases glow discharge polymerization H₂ H₂O heating HNO3 increase ion beam deposition ion source ionization layer magnetic field magnetron mask metal mTorr N₂ nitride O₂ operation oxide photoresist Phys planar plasma plasma etching plating PM sputtering polishing polymer polymer deposition potential power density pressure Proc produce ratio reactants reaction reactive sputtering reactor Section semiconductor shown in Fig silicon silicon nitride SiO2 solution species sputter deposition Sputter Gun sputtering yield starting material stoichiometry substrate susceptor target surface techniques Technol temperature thermal thickness Thin Film Thin Solid Films tion U.S. Patent uniform vacuum vapor voltage wafer York µm/min