Thin Film Processes, Volume 1John L. Vossen, Werner Kern Remarkable advances have been made in recent years in the science and technology of thin film processes for deposition and etching. It is the purpose of this book to bring together tutorial reviews of selected filmdeposition and etching processes from a process viewpoint. Emphasis is placed on the practical use of the processes to provide working guidelines for their implementation, a guide to the literature, and an overview of each process. |
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Page 50
... Table V. This table includes only processes in which the target ( or evap- orant in reactive ion plating ) is a metal , and the desired compounds are wholly synthesized in the deposition process . Reactive sputtering of com- pounds to ...
... Table V. This table includes only processes in which the target ( or evap- orant in reactive ion plating ) is a metal , and the desired compounds are wholly synthesized in the deposition process . Reactive sputtering of com- pounds to ...
Page 155
... Table VI lists some results for rf sputtering of aluminum oxide targets . The data of Table V also allow determination of the conditions when a poor thermal conductor such as stainless steel can be used as a backing plate . In all cases ...
... Table VI lists some results for rf sputtering of aluminum oxide targets . The data of Table V also allow determination of the conditions when a poor thermal conductor such as stainless steel can be used as a backing plate . In all cases ...
Page 434
... Table I - General Survey Table II - Selected Bulk Silicate Glasses 2. Elemental Semiconductors Tables III - VII - Silicon and Germanium 3. Compound Semiconductors Table VIII - Silicon Carbide Table IX - Gallium Arsenide Table X ...
... Table I - General Survey Table II - Selected Bulk Silicate Glasses 2. Elemental Semiconductors Tables III - VII - Silicon and Germanium 3. Compound Semiconductors Table VIII - Silicon Carbide Table IX - Gallium Arsenide Table X ...
Contents
J J CUOMO 11 IBM Thomas J Watson Research Center Yorktown | 11 |
ix | 75 |
FREDERICK A LOWENHEIM 209 637 West 7th Street Plainfield | 115 |
Copyright | |
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Å/min alloys Amorphous anode Appl argon atoms bias cathode Chem chemical coatings composition compounds current density deposition rate dielectric discharge power effect electric Electrochem electron electroplating energy Epitaxial etch rate etchants etching processes film deposition flow rate GaAs gases glow discharge polymerization H₂ H₂O heating HNO3 increase ion beam deposition ion source ionization layer magnetic field magnetron mask metal mTorr N₂ nitride O₂ operation oxide photoresist Phys planar plasma plasma etching plating PM sputtering polishing polymer polymer deposition potential power density pressure Proc produce ratio reactants reaction reactive sputtering reactor Section semiconductor shown in Fig silicon silicon nitride SiO2 solution species sputter deposition Sputter Gun sputtering yield starting material stoichiometry substrate susceptor target surface techniques Technol temperature thermal thickness Thin Film Thin Solid Films tion U.S. Patent uniform vacuum vapor voltage wafer York µm/min