Thin Film Processes, Volume 1John L. Vossen, Werner Kern Remarkable advances have been made in recent years in the science and technology of thin film processes for deposition and etching. It is the purpose of this book to bring together tutorial reviews of selected filmdeposition and etching processes from a process viewpoint. Emphasis is placed on the practical use of the processes to provide working guidelines for their implementation, a guide to the literature, and an overview of each process. |
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Page 89
... anode ( in configurations with axial anodes ) and the for- mation of a negative space charge ( NSC ) anode sheath if the anode diame- ter is small . If the magnetic field is made very strong , the electron mobility can be decreased to ...
... anode ( in configurations with axial anodes ) and the for- mation of a negative space charge ( NSC ) anode sheath if the anode diame- ter is small . If the magnetic field is made very strong , the electron mobility can be decreased to ...
Page 181
... anode constricts the plasma axially . The anode region is shown in Fig . 6 [ 23 ] . The diverging magnetic field region shapes a plasma meniscus next to the anode aperture , which becomes the emitting surface for ion extraction . Argon ...
... anode constricts the plasma axially . The anode region is shown in Fig . 6 [ 23 ] . The diverging magnetic field region shapes a plasma meniscus next to the anode aperture , which becomes the emitting surface for ion extraction . Argon ...
Page 551
... anode structure similar to that shown in Fig . 12 of Chapter II - 1 . For effec- tive x - ray suppression , the capture anode depends on two factors ; first , the secondary electrons leaving the cathode have trajectories which are ...
... anode structure similar to that shown in Fig . 12 of Chapter II - 1 . For effec- tive x - ray suppression , the capture anode depends on two factors ; first , the secondary electrons leaving the cathode have trajectories which are ...
Contents
J J CUOMO 11 IBM Thomas J Watson Research Center Yorktown | 11 |
Glow Discharges | 24 |
Equipment Configuration | 31 |
Copyright | |
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Å/min alloys Amorphous anode Appl applications argon atoms bias cathode Chem chemical coatings composition compounds current density deposition rate dielectric discharge power effect electric Electrochem electron electroplating energy Epitaxial etch rate etchants etching processes film deposition flow rate GaAs gases glow discharge polymerization H₂ H₂O heating HNO3 increase ion beam deposition ion source ionization Kern layer magnetic field magnetron mask metal mTorr N₂ nitride O₂ operation oxide photoresist Phys planar plasma plasma etching plating PM sputtering polishing polymer polymer deposition potential pressure Proc produce ratio reactants reaction reactive sputtering reactor Section semiconductor shown in Fig silicon silicon nitride SiO2 solution species sputter deposition Sputter Gun sputtering yield starting material stoichiometry substrate susceptor target surface techniques Technol temperature thermal thickness Thin Film Thin Solid Films tion U.S. Patent uniform vacuum vapor voltage wafer York