Thin Film Processes, Volume 1John L. Vossen, Werner Kern Remarkable advances have been made in recent years in the science and technology of thin film processes for deposition and etching. It is the purpose of this book to bring together tutorial reviews of selected filmdeposition and etching processes from a process viewpoint. Emphasis is placed on the practical use of the processes to provide working guidelines for their implementation, a guide to the literature, and an overview of each process. |
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Page 21
... composition is that of the bulk target composition and the altered layer will recede uni- formly with continued sputtering as long as the steady state conditions are maintained . Data on altered layers come from several areas : sputter ...
... composition is that of the bulk target composition and the altered layer will recede uni- formly with continued sputtering as long as the steady state conditions are maintained . Data on altered layers come from several areas : sputter ...
Page 242
... Composition Both the starting composition and the composition changes as a func- tion of time are important . It is sometimes necessary to replace depleted components continuously during operation . G. Alloy Plating Fundamentals Two ...
... Composition Both the starting composition and the composition changes as a func- tion of time are important . It is sometimes necessary to replace depleted components continuously during operation . G. Alloy Plating Fundamentals Two ...
Page 259
... composition of the solid and vapor phases in the CVD system . The composition of the solid can be analyzed after the experiment , but the composition of the vapor must be determined in situ at CVD pressures and temperatures , because ...
... composition of the solid and vapor phases in the CVD system . The composition of the solid can be analyzed after the experiment , but the composition of the vapor must be determined in situ at CVD pressures and temperatures , because ...
Contents
J J CUOMO 11 IBM Thomas J Watson Research Center Yorktown | 11 |
ix | 75 |
FREDERICK A LOWENHEIM 209 637 West 7th Street Plainfield | 115 |
Copyright | |
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Å/min alloys Amorphous anode Appl argon atoms bias cathode Chem chemical coatings composition compounds current density deposition rate dielectric discharge power effect electric Electrochem electron electroplating energy Epitaxial etch rate etchants etching processes film deposition flow rate GaAs gases glow discharge polymerization H₂ H₂O heating HNO3 increase ion beam deposition ion source ionization layer magnetic field magnetron mask metal mTorr N₂ nitride O₂ operation oxide photoresist Phys planar plasma plasma etching plating PM sputtering polishing polymer polymer deposition potential power density pressure Proc produce ratio reactants reaction reactive sputtering reactor Section semiconductor shown in Fig silicon silicon nitride SiO2 solution species sputter deposition Sputter Gun sputtering yield starting material stoichiometry substrate susceptor target surface techniques Technol temperature thermal thickness Thin Film Thin Solid Films tion U.S. Patent uniform vacuum vapor voltage wafer York µm/min