Thin Film Processes, Volume 1John L. Vossen, Werner Kern Remarkable advances have been made in recent years in the science and technology of thin film processes for deposition and etching. It is the purpose of this book to bring together tutorial reviews of selected filmdeposition and etching processes from a process viewpoint. Emphasis is placed on the practical use of the processes to provide working guidelines for their implementation, a guide to the literature, and an overview of each process. |
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Page 149
... CURRENT DENSITY ( mA / cm2 ) 700 600 ARGON 500 400 300 200 2 average cathode current density mA / cm2 6 8 10 60 30 20 ៣៩ 10 PRESSURE ( mTorr ) Fig . 9. ( a ) Current - voltage characteristics for rectangular planar magnetron cathode ...
... CURRENT DENSITY ( mA / cm2 ) 700 600 ARGON 500 400 300 200 2 average cathode current density mA / cm2 6 8 10 60 30 20 ៣៩ 10 PRESSURE ( mTorr ) Fig . 9. ( a ) Current - voltage characteristics for rectangular planar magnetron cathode ...
Page 232
... Current Density The weight of material deposited is of less interest than the distribu- tion of the deposit over the cathode , and its thickness . One of the princi- pal variables in electroplating , therefore , is current density ...
... Current Density The weight of material deposited is of less interest than the distribu- tion of the deposit over the cathode , and its thickness . One of the princi- pal variables in electroplating , therefore , is current density ...
Page 241
... current also increases according to Ohm's law , if one subtracts electrode polarization from the total potential ... density for any given electrolysis . If the potential is increased further , some new process such as H2 evolu- tion may ...
... current also increases according to Ohm's law , if one subtracts electrode polarization from the total potential ... density for any given electrolysis . If the potential is increased further , some new process such as H2 evolu- tion may ...
Contents
J J CUOMO 11 IBM Thomas J Watson Research Center Yorktown | 11 |
ix | 75 |
FREDERICK A LOWENHEIM 209 637 West 7th Street Plainfield | 115 |
Copyright | |
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Å/min alloys Amorphous anode Appl argon atoms bias cathode Chem chemical coatings composition compounds current density deposition rate dielectric discharge power effect electric Electrochem electron electroplating energy Epitaxial etch rate etchants etching processes film deposition flow rate GaAs gases glow discharge polymerization H₂ H₂O heating HNO3 increase ion beam deposition ion source ionization layer magnetic field magnetron mask metal mTorr N₂ nitride O₂ operation oxide photoresist Phys planar plasma plasma etching plating PM sputtering polishing polymer polymer deposition potential power density pressure Proc produce ratio reactants reaction reactive sputtering reactor Section semiconductor shown in Fig silicon silicon nitride SiO2 solution species sputter deposition Sputter Gun sputtering yield starting material stoichiometry substrate susceptor target surface techniques Technol temperature thermal thickness Thin Film Thin Solid Films tion U.S. Patent uniform vacuum vapor voltage wafer York µm/min