Thin Film Processes, Volume 1John L. Vossen, Werner Kern Remarkable advances have been made in recent years in the science and technology of thin film processes for deposition and etching. It is the purpose of this book to bring together tutorial reviews of selected filmdeposition and etching processes from a process viewpoint. Emphasis is placed on the practical use of the processes to provide working guidelines for their implementation, a guide to the literature, and an overview of each process. |
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Page 120
John L. Vossen, Werner Kern. Al - 2 % Si DEPOSITION RATE Å / MIN 400 300 200 100 1 2 3 4 5 6 7 Ar PRESSURE ( mtorr ) Fig . 7. Deposition rate versus Ar pressure for 12.5 cm S - Gun with Al cathode , anode at +40 V relative to ground and ...
John L. Vossen, Werner Kern. Al - 2 % Si DEPOSITION RATE Å / MIN 400 300 200 100 1 2 3 4 5 6 7 Ar PRESSURE ( mtorr ) Fig . 7. Deposition rate versus Ar pressure for 12.5 cm S - Gun with Al cathode , anode at +40 V relative to ground and ...
Page 150
... Deposition Rate 1. Factors Determining Deposition Rate Sputtering rates are determined primarily by the ion - current density at the target and secondarily by the ion energy ( voltage ) . In practice , for magnetron sputtering , deposition ...
... Deposition Rate 1. Factors Determining Deposition Rate Sputtering rates are determined primarily by the ion - current density at the target and secondarily by the ion energy ( voltage ) . In practice , for magnetron sputtering , deposition ...
Page 152
John L. Vossen, Werner Kern. tering yield . If the deposition rate or efficiency of a given material of yield A is known , then the expected rate for another material of yield B under the same conditions can be estimated by multiplying the ...
John L. Vossen, Werner Kern. tering yield . If the deposition rate or efficiency of a given material of yield A is known , then the expected rate for another material of yield B under the same conditions can be estimated by multiplying the ...
Contents
J J CUOMO 11 IBM Thomas J Watson Research Center Yorktown | 11 |
ix | 75 |
FREDERICK A LOWENHEIM 209 637 West 7th Street Plainfield | 115 |
Copyright | |
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Å/min alloys Amorphous anode Appl argon atoms bias cathode Chem chemical coatings composition compounds current density deposition rate dielectric discharge power effect electric Electrochem electron electroplating energy Epitaxial etch rate etchants etching processes film deposition flow rate GaAs gases glow discharge polymerization H₂ H₂O heating HNO3 increase ion beam deposition ion source ionization layer magnetic field magnetron mask metal mTorr N₂ nitride O₂ operation oxide photoresist Phys planar plasma plasma etching plating PM sputtering polishing polymer polymer deposition potential power density pressure Proc produce ratio reactants reaction reactive sputtering reactor Section semiconductor shown in Fig silicon silicon nitride SiO2 solution species sputter deposition Sputter Gun sputtering yield starting material stoichiometry substrate susceptor target surface techniques Technol temperature thermal thickness Thin Film Thin Solid Films tion U.S. Patent uniform vacuum vapor voltage wafer York µm/min