Thin Film Processes, Volume 1John L. Vossen, Werner Kern Remarkable advances have been made in recent years in the science and technology of thin film processes for deposition and etching. It is the purpose of this book to bring together tutorial reviews of selected filmdeposition and etching processes from a process viewpoint. Emphasis is placed on the practical use of the processes to provide working guidelines for their implementation, a guide to the literature, and an overview of each process. |
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Page 191
... higher energy due to implantation [ 55 ] . s is of the order of unity in the energy range considered here [ 56 ] . ( 2 ) s generally increases with mass of ion [ 54b , 55 , 57 ] . ( 3 ) s increases with angle of ion incidence away from ...
... higher energy due to implantation [ 55 ] . s is of the order of unity in the energy range considered here [ 56 ] . ( 2 ) s generally increases with mass of ion [ 54b , 55 , 57 ] . ( 3 ) s increases with angle of ion incidence away from ...
Page 245
... higher the ratio M1 / M , in the bath , the higher that in the deposit , but not necessarily in the same proportion . The current efficiency in alloy plating may be higher or lower than that for each single metal . In some cases , such ...
... higher the ratio M1 / M , in the bath , the higher that in the deposit , but not necessarily in the same proportion . The current efficiency in alloy plating may be higher or lower than that for each single metal . In some cases , such ...
Page 291
... Higher temperatures [ 101 ] and differ- ent oxidants [ 102 ] have also been investigated for silane oxidation , as well as low - pressure CVD techniques [ 23 , 66 ] . If higher substrate tempera- tures are permissible , excellent ...
... Higher temperatures [ 101 ] and differ- ent oxidants [ 102 ] have also been investigated for silane oxidation , as well as low - pressure CVD techniques [ 23 , 66 ] . If higher substrate tempera- tures are permissible , excellent ...
Contents
J J CUOMO 11 IBM Thomas J Watson Research Center Yorktown | 11 |
ix | 75 |
FREDERICK A LOWENHEIM 209 637 West 7th Street Plainfield | 115 |
Copyright | |
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Å/min alloys Amorphous anode Appl argon atoms bias cathode Chem chemical coatings composition compounds current density deposition rate dielectric discharge power effect electric Electrochem electron electroplating energy Epitaxial etch rate etchants etching processes film deposition flow rate GaAs gases glow discharge polymerization H₂ H₂O heating HNO3 increase ion beam deposition ion source ionization layer magnetic field magnetron mask metal mTorr N₂ nitride O₂ operation oxide photoresist Phys planar plasma plasma etching plating PM sputtering polishing polymer polymer deposition potential power density pressure Proc produce ratio reactants reaction reactive sputtering reactor Section semiconductor shown in Fig silicon silicon nitride SiO2 solution species sputter deposition Sputter Gun sputtering yield starting material stoichiometry substrate susceptor target surface techniques Technol temperature thermal thickness Thin Film Thin Solid Films tion U.S. Patent uniform vacuum vapor voltage wafer York µm/min