Thin Film Processes, Volume 1John L. Vossen, Werner Kern Remarkable advances have been made in recent years in the science and technology of thin film processes for deposition and etching. It is the purpose of this book to bring together tutorial reviews of selected filmdeposition and etching processes from a process viewpoint. Emphasis is placed on the practical use of the processes to provide working guidelines for their implementation, a guide to the literature, and an overview of each process. |
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Page 175
John L. Vossen, Werner Kern. 11-5 Ion Beam Deposition JAMES M. E. HARPER IBM Thomas J. Watson Research Center Yorktown Heights , New York I. Introduction II . Ion Beam Generation A. Production of Ions B. Ion Sources C. Beam Extraction ...
John L. Vossen, Werner Kern. 11-5 Ion Beam Deposition JAMES M. E. HARPER IBM Thomas J. Watson Research Center Yorktown Heights , New York I. Introduction II . Ion Beam Generation A. Production of Ions B. Ion Sources C. Beam Extraction ...
Page 176
John L. Vossen, Werner Kern. EXTRACTOR ION SOURCE ( a ) SUBSTRATE ION BEAM SUBSTRATE SPUTTERED MATERIAL TARGET EXTRACTOR ION BEAM ION SOURCE ( b ) Fig . 1. Ion beam deposition configurations . ( a ) Primary ion beam deposition , with ion ...
John L. Vossen, Werner Kern. EXTRACTOR ION SOURCE ( a ) SUBSTRATE ION BEAM SUBSTRATE SPUTTERED MATERIAL TARGET EXTRACTOR ION BEAM ION SOURCE ( b ) Fig . 1. Ion beam deposition configurations . ( a ) Primary ion beam deposition , with ion ...
Page 195
... Ion beam sputtered films were found by Schmidt et al . [ 27 ] to have lower internal stress than evaporated films . No curling was observed when removing Au and Ta films from various substrates . Castellano et al ... ION BEAM DEPOSITION 195.
... Ion beam sputtered films were found by Schmidt et al . [ 27 ] to have lower internal stress than evaporated films . No curling was observed when removing Au and Ta films from various substrates . Castellano et al ... ION BEAM DEPOSITION 195.
Contents
J J CUOMO 11 IBM Thomas J Watson Research Center Yorktown | 11 |
ix | 75 |
FREDERICK A LOWENHEIM 209 637 West 7th Street Plainfield | 115 |
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Å/min alloys Amorphous anode Appl argon atoms bias cathode Chem chemical coatings composition compounds current density deposition rate dielectric discharge power effect electric Electrochem electron electroplating energy Epitaxial etch rate etchants etching processes film deposition flow rate GaAs gases glow discharge polymerization H₂ H₂O heating HNO3 increase ion beam deposition ion source ionization layer magnetic field magnetron mask metal mTorr N₂ nitride O₂ operation oxide photoresist Phys planar plasma plasma etching plating PM sputtering polishing polymer polymer deposition potential power density pressure Proc produce ratio reactants reaction reactive sputtering reactor Section semiconductor shown in Fig silicon silicon nitride SiO2 solution species sputter deposition Sputter Gun sputtering yield starting material stoichiometry substrate susceptor target surface techniques Technol temperature thermal thickness Thin Film Thin Solid Films tion U.S. Patent uniform vacuum vapor voltage wafer York µm/min