Thin Film Processes, Volume 1John L. Vossen, Werner Kern Remarkable advances have been made in recent years in the science and technology of thin film processes for deposition and etching. It is the purpose of this book to bring together tutorial reviews of selected filmdeposition and etching processes from a process viewpoint. Emphasis is placed on the practical use of the processes to provide working guidelines for their implementation, a guide to the literature, and an overview of each process. |
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Page 47
... ionized by this process [ 256 ] . The amount of Penning ionization that occurs increases with increasing gas pressure . B. Sources of Gas Contamination The major sources of gaseous impurities in sputtering systems are re- sidual gases ...
... ionized by this process [ 256 ] . The amount of Penning ionization that occurs increases with increasing gas pressure . B. Sources of Gas Contamination The major sources of gaseous impurities in sputtering systems are re- sidual gases ...
Page 177
John L. Vossen, Werner Kern. A. Production of lons The ionization mechanism used in most ion sources is electron impact ionization in a low voltage gas discharge . The cross section for electron impact ionization has a maximum at low ...
John L. Vossen, Werner Kern. A. Production of lons The ionization mechanism used in most ion sources is electron impact ionization in a low voltage gas discharge . The cross section for electron impact ionization has a maximum at low ...
Page 501
... ionization CF , + e → CF + F + 2e dissociative ionization ( 1 ) ( 2 ) Ionization potentials of atoms and molecules typically range from 8 to 20 eV , which is well above the mean electron energy in a discharge used for plasma etching ...
... ionization CF , + e → CF + F + 2e dissociative ionization ( 1 ) ( 2 ) Ionization potentials of atoms and molecules typically range from 8 to 20 eV , which is well above the mean electron energy in a discharge used for plasma etching ...
Contents
J J CUOMO 11 IBM Thomas J Watson Research Center Yorktown | 11 |
ix | 75 |
FREDERICK A LOWENHEIM 209 637 West 7th Street Plainfield | 115 |
Copyright | |
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Å/min alloys Amorphous anode Appl argon atoms bias cathode Chem chemical coatings composition compounds current density deposition rate dielectric discharge power effect electric Electrochem electron electroplating energy Epitaxial etch rate etchants etching processes film deposition flow rate GaAs gases glow discharge polymerization H₂ H₂O heating HNO3 increase ion beam deposition ion source ionization layer magnetic field magnetron mask metal mTorr N₂ nitride O₂ operation oxide photoresist Phys planar plasma plasma etching plating PM sputtering polishing polymer polymer deposition potential power density pressure Proc produce ratio reactants reaction reactive sputtering reactor Section semiconductor shown in Fig silicon silicon nitride SiO2 solution species sputter deposition Sputter Gun sputtering yield starting material stoichiometry substrate susceptor target surface techniques Technol temperature thermal thickness Thin Film Thin Solid Films tion U.S. Patent uniform vacuum vapor voltage wafer York µm/min