Thin Film Processes, Volume 1John L. Vossen, Werner Kern Remarkable advances have been made in recent years in the science and technology of thin film processes for deposition and etching. It is the purpose of this book to bring together tutorial reviews of selected filmdeposition and etching processes from a process viewpoint. Emphasis is placed on the practical use of the processes to provide working guidelines for their implementation, a guide to the literature, and an overview of each process. |
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Page 408
... masks may not provide adequate protection . In these cases , metal or dielectric masks , which can withstand the etching process more effec- tively , are often used . In such cases , the mask is first patterned using a photoresist ...
... masks may not provide adequate protection . In these cases , metal or dielectric masks , which can withstand the etching process more effec- tively , are often used . In such cases , the mask is first patterned using a photoresist ...
Page 409
... mask - to - film adhesion remains perfect throughout etching , and if the etching process is isotropic , a delineated pattern like that in Fig . 2a will result . If the etchant attacks the interface between mask and substrate film ...
... mask - to - film adhesion remains perfect throughout etching , and if the etching process is isotropic , a delineated pattern like that in Fig . 2a will result . If the etchant attacks the interface between mask and substrate film ...
Page 544
... mask edge ; overetching produces circular arcs centered at the mask edge with a radius proportional to the etch time as shown in Fig . 25 [ 40 ] . If the etched film is structurally and chemically homogeneous , if there is no mask ...
... mask edge ; overetching produces circular arcs centered at the mask edge with a radius proportional to the etch time as shown in Fig . 25 [ 40 ] . If the etched film is structurally and chemically homogeneous , if there is no mask ...
Contents
J J CUOMO 11 IBM Thomas J Watson Research Center Yorktown | 11 |
ix | 75 |
FREDERICK A LOWENHEIM 209 637 West 7th Street Plainfield | 115 |
Copyright | |
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Å/min alloys Amorphous anode Appl argon atoms bias cathode Chem chemical coatings composition compounds current density deposition rate dielectric discharge power effect electric Electrochem electron electroplating energy Epitaxial etch rate etchants etching processes film deposition flow rate GaAs gases glow discharge polymerization H₂ H₂O heating HNO3 increase ion beam deposition ion source ionization layer magnetic field magnetron mask metal mTorr N₂ nitride O₂ operation oxide photoresist Phys planar plasma plasma etching plating PM sputtering polishing polymer polymer deposition potential power density pressure Proc produce ratio reactants reaction reactive sputtering reactor Section semiconductor shown in Fig silicon silicon nitride SiO2 solution species sputter deposition Sputter Gun sputtering yield starting material stoichiometry substrate susceptor target surface techniques Technol temperature thermal thickness Thin Film Thin Solid Films tion U.S. Patent uniform vacuum vapor voltage wafer York µm/min