Thin Film Processes, Volume 1John L. Vossen, Werner Kern Remarkable advances have been made in recent years in the science and technology of thin film processes for deposition and etching. It is the purpose of this book to bring together tutorial reviews of selected filmdeposition and etching processes from a process viewpoint. Emphasis is placed on the practical use of the processes to provide working guidelines for their implementation, a guide to the literature, and an overview of each process. |
From inside the book
Results 1-3 of 86
Page 368
... occurs be- fore , during , and after the glow discharge . In the case of a nonpolymer- forming plasma , no pressure ... occurs onto surfaces exposed to ( directly contacting ) the glow . Some dep- osition of polymer occurs on surfaces in ...
... occurs be- fore , during , and after the glow discharge . In the case of a nonpolymer- forming plasma , no pressure ... occurs onto surfaces exposed to ( directly contacting ) the glow . Some dep- osition of polymer occurs on surfaces in ...
Page 501
... occurs predominantly by electron impact . Reactions of this type include : O2 + e → O + 2e ionization CF , + e → CF + F + 2e dissociative ionization ( 1 ) ( 2 ) Ionization potentials of atoms and molecules typically range from 8 to 20 ...
... occurs predominantly by electron impact . Reactions of this type include : O2 + e → O + 2e ionization CF , + e → CF + F + 2e dissociative ionization ( 1 ) ( 2 ) Ionization potentials of atoms and molecules typically range from 8 to 20 ...
Page 506
... occurs at lower O concentration than that which produces a maximum F atom concentration as can be seen in Fig . 1. Oxygen adsorption does not occur to an appreciable extent on the SiO surface so that the maximum etch rate for SiO ...
... occurs at lower O concentration than that which produces a maximum F atom concentration as can be seen in Fig . 1. Oxygen adsorption does not occur to an appreciable extent on the SiO surface so that the maximum etch rate for SiO ...
Contents
J J CUOMO 11 IBM Thomas J Watson Research Center Yorktown | 11 |
ix | 75 |
FREDERICK A LOWENHEIM 209 637 West 7th Street Plainfield | 115 |
Copyright | |
2 other sections not shown
Other editions - View all
Common terms and phrases
Å/min alloys Amorphous anode Appl argon atoms bias cathode Chem chemical coatings composition compounds current density deposition rate dielectric discharge power effect electric Electrochem electron electroplating energy Epitaxial etch rate etchants etching processes film deposition flow rate GaAs gases glow discharge polymerization H₂ H₂O heating HNO3 increase ion beam deposition ion source ionization layer magnetic field magnetron mask metal mTorr N₂ nitride O₂ operation oxide photoresist Phys planar plasma plasma etching plating PM sputtering polishing polymer polymer deposition potential power density pressure Proc produce ratio reactants reaction reactive sputtering reactor Section semiconductor shown in Fig silicon silicon nitride SiO2 solution species sputter deposition Sputter Gun sputtering yield starting material stoichiometry substrate susceptor target surface techniques Technol temperature thermal thickness Thin Film Thin Solid Films tion U.S. Patent uniform vacuum vapor voltage wafer York µm/min