Thin Film Processes, Volume 1John L. Vossen, Werner Kern Remarkable advances have been made in recent years in the science and technology of thin film processes for deposition and etching. It is the purpose of this book to bring together tutorial reviews of selected filmdeposition and etching processes from a process viewpoint. Emphasis is placed on the practical use of the processes to provide working guidelines for their implementation, a guide to the literature, and an overview of each process. |
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Page vi
... Operation III . Cylindrical Magnetron Apparatus IV . Plasma Discharge V. RF Operation 76 79 90 94 98 VI . Erosion and Deposition Profiles 99 102 VII . Coating Deposition VIII . Reactive Sputtering IX . Summary References 107 109 110 II ...
... Operation III . Cylindrical Magnetron Apparatus IV . Plasma Discharge V. RF Operation 76 79 90 94 98 VI . Erosion and Deposition Profiles 99 102 VII . Coating Deposition VIII . Reactive Sputtering IX . Summary References 107 109 110 II ...
Page 116
... operation . The anodes are also water cooled and insulated , permitting them to be electrically biased . The cathodes are shown schematically in Figs . 3 and 4 with the B field and the plasma ring . Permanent magnets are used to obtain ...
... operation . The anodes are also water cooled and insulated , permitting them to be electrically biased . The cathodes are shown schematically in Figs . 3 and 4 with the B field and the plasma ring . Permanent magnets are used to obtain ...
Page 120
... operation . × , 5 A constant current ; ○ , constant power . stant power mode of operation . As the pressure is decreased , the voltage required to sustain a given current increases and the sputtering efficiency increases [ 3 ] yielding ...
... operation . × , 5 A constant current ; ○ , constant power . stant power mode of operation . As the pressure is decreased , the voltage required to sustain a given current increases and the sputtering efficiency increases [ 3 ] yielding ...
Contents
J J CUOMO 11 IBM Thomas J Watson Research Center Yorktown | 11 |
ix | 75 |
FREDERICK A LOWENHEIM 209 637 West 7th Street Plainfield | 115 |
Copyright | |
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Å/min alloys Amorphous anode Appl argon atoms bias cathode Chem chemical coatings composition compounds current density deposition rate dielectric discharge power effect electric Electrochem electron electroplating energy Epitaxial etch rate etchants etching processes film deposition flow rate GaAs gases glow discharge polymerization H₂ H₂O heating HNO3 increase ion beam deposition ion source ionization layer magnetic field magnetron mask metal mTorr N₂ nitride O₂ operation oxide photoresist Phys planar plasma plasma etching plating PM sputtering polishing polymer polymer deposition potential power density pressure Proc produce ratio reactants reaction reactive sputtering reactor Section semiconductor shown in Fig silicon silicon nitride SiO2 solution species sputter deposition Sputter Gun sputtering yield starting material stoichiometry substrate susceptor target surface techniques Technol temperature thermal thickness Thin Film Thin Solid Films tion U.S. Patent uniform vacuum vapor voltage wafer York µm/min