Thin Film Processes, Volume 1John L. Vossen, Werner Kern Remarkable advances have been made in recent years in the science and technology of thin film processes for deposition and etching. It is the purpose of this book to bring together tutorial reviews of selected filmdeposition and etching processes from a process viewpoint. Emphasis is placed on the practical use of the processes to provide working guidelines for their implementation, a guide to the literature, and an overview of each process. |
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Page 252
... oxide . These coatings are essentially non- porous ; their thickness is limited to about 1.3 nm / V applied . This thick- ness represents the distance through which ions can penetrate the oxide under the influence of the applied ...
... oxide . These coatings are essentially non- porous ; their thickness is limited to about 1.3 nm / V applied . This thick- ness represents the distance through which ions can penetrate the oxide under the influence of the applied ...
Page 351
... Oxide and Oxynitride 1. Silicon Oxide Unless great care is taken with the vacuum and wall conditions during plasma deposition , most silicon oxides will contain a small , but measur- able , amount of nitrogen derived from background ...
... Oxide and Oxynitride 1. Silicon Oxide Unless great care is taken with the vacuum and wall conditions during plasma deposition , most silicon oxides will contain a small , but measur- able , amount of nitrogen derived from background ...
Page 551
John L. Vossen, Werner Kern. oxide be directly exposed to either rf sputter etching or ion beam milling . However , if the gate oxide is protected under the gate metallization , the devices are much less susceptible to damage . Under ...
John L. Vossen, Werner Kern. oxide be directly exposed to either rf sputter etching or ion beam milling . However , if the gate oxide is protected under the gate metallization , the devices are much less susceptible to damage . Under ...
Contents
J J CUOMO 11 IBM Thomas J Watson Research Center Yorktown | 11 |
ix | 75 |
FREDERICK A LOWENHEIM 209 637 West 7th Street Plainfield | 115 |
Copyright | |
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Å/min alloys Amorphous anode Appl argon atoms bias cathode Chem chemical coatings composition compounds current density deposition rate dielectric discharge power effect electric Electrochem electron electroplating energy Epitaxial etch rate etchants etching processes film deposition flow rate GaAs gases glow discharge polymerization H₂ H₂O heating HNO3 increase ion beam deposition ion source ionization layer magnetic field magnetron mask metal mTorr N₂ nitride O₂ operation oxide photoresist Phys planar plasma plasma etching plating PM sputtering polishing polymer polymer deposition potential power density pressure Proc produce ratio reactants reaction reactive sputtering reactor Section semiconductor shown in Fig silicon silicon nitride SiO2 solution species sputter deposition Sputter Gun sputtering yield starting material stoichiometry substrate susceptor target surface techniques Technol temperature thermal thickness Thin Film Thin Solid Films tion U.S. Patent uniform vacuum vapor voltage wafer York µm/min