Thin Film Processes, Volume 1John L. Vossen, Werner Kern Remarkable advances have been made in recent years in the science and technology of thin film processes for deposition and etching. It is the purpose of this book to bring together tutorial reviews of selected filmdeposition and etching processes from a process viewpoint. Emphasis is placed on the practical use of the processes to provide working guidelines for their implementation, a guide to the literature, and an overview of each process. |
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Page 407
... pattern etching of Si3N4 or Al2O3 films in hot H3PO4 using an etch - resistant deposited SiO , film as the etch mask illustrates a high degree of etching selectivity . On the other hand , controlled partial etching selectivity of ...
... pattern etching of Si3N4 or Al2O3 films in hot H3PO4 using an etch - resistant deposited SiO , film as the etch mask illustrates a high degree of etching selectivity . On the other hand , controlled partial etching selectivity of ...
Page 439
... pattern edges 4 μm / min ; nonlinear pattern edges 4 μm / min ; nonlinear pattern edges 0.8 μm / min ; smooth pattern edges 0.6 μm / min ; nonlinear pattern edges 0.5 μm / min ; nonlinear pattern edges [ 268 ] 13 15HNO3 , 5CH3COOH , 2HF ...
... pattern edges 4 μm / min ; nonlinear pattern edges 4 μm / min ; nonlinear pattern edges 0.8 μm / min ; smooth pattern edges 0.6 μm / min ; nonlinear pattern edges 0.5 μm / min ; nonlinear pattern edges [ 268 ] 13 15HNO3 , 5CH3COOH , 2HF ...
Page 497
... Pattern Delineation C. M. MELLIAR - SMITH AND C. J. MOGAB Bell Telephone Laboratories Murray Hill , New Jersey I ... Pattern Edge Profiles A. Ion Etching B. Plasma Etching 537 538 543 VI . Advantages and Disadvantages of Plasma ...
... Pattern Delineation C. M. MELLIAR - SMITH AND C. J. MOGAB Bell Telephone Laboratories Murray Hill , New Jersey I ... Pattern Edge Profiles A. Ion Etching B. Plasma Etching 537 538 543 VI . Advantages and Disadvantages of Plasma ...
Contents
J J CUOMO 11 IBM Thomas J Watson Research Center Yorktown | 11 |
ix | 75 |
FREDERICK A LOWENHEIM 209 637 West 7th Street Plainfield | 115 |
Copyright | |
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Å/min alloys Amorphous anode Appl argon atoms bias cathode Chem chemical coatings composition compounds current density deposition rate dielectric discharge power effect electric Electrochem electron electroplating energy Epitaxial etch rate etchants etching processes film deposition flow rate GaAs gases glow discharge polymerization H₂ H₂O heating HNO3 increase ion beam deposition ion source ionization layer magnetic field magnetron mask metal mTorr N₂ nitride O₂ operation oxide photoresist Phys planar plasma plasma etching plating PM sputtering polishing polymer polymer deposition potential power density pressure Proc produce ratio reactants reaction reactive sputtering reactor Section semiconductor shown in Fig silicon silicon nitride SiO2 solution species sputter deposition Sputter Gun sputtering yield starting material stoichiometry substrate susceptor target surface techniques Technol temperature thermal thickness Thin Film Thin Solid Films tion U.S. Patent uniform vacuum vapor voltage wafer York µm/min