Thin Film Processes, Volume 1John L. Vossen, Werner Kern Remarkable advances have been made in recent years in the science and technology of thin film processes for deposition and etching. It is the purpose of this book to bring together tutorial reviews of selected filmdeposition and etching processes from a process viewpoint. Emphasis is placed on the practical use of the processes to provide working guidelines for their implementation, a guide to the literature, and an overview of each process. |
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Page 356
... Plasma Oxides by Anodization Plasma anodization is the formation of thin oxide films by placing the metal or semiconductor substrate under bias in the field of an oxygen plasma . Thus , plasma anodization is not a deposition process but ...
... Plasma Oxides by Anodization Plasma anodization is the formation of thin oxide films by placing the metal or semiconductor substrate under bias in the field of an oxygen plasma . Thus , plasma anodization is not a deposition process but ...
Page 367
... plasma . Al- though the term F2 plasma is used to describe the effect of detached F in plasma , F2 is not detected in the plasma state , perhaps due to its ex- tremely high reactivity [ 74 ] . 2 It is interesting to note that F and O ...
... plasma . Al- though the term F2 plasma is used to describe the effect of detached F in plasma , F2 is not detected in the plasma state , perhaps due to its ex- tremely high reactivity [ 74 ] . 2 It is interesting to note that F and O ...
Page 562
... Plasma anodization , 4 , 356 Plasma deposition application , 357-358 control parameters , 337 system requirement , 337-342 Plasma deposition reactors electrode design , 338-339 flat , 337-339 , 348-351 parallel - plate , 337-339 , 348 ...
... Plasma anodization , 4 , 356 Plasma deposition application , 357-358 control parameters , 337 system requirement , 337-342 Plasma deposition reactors electrode design , 338-339 flat , 337-339 , 348-351 parallel - plate , 337-339 , 348 ...
Contents
J J CUOMO 11 IBM Thomas J Watson Research Center Yorktown | 11 |
ix | 75 |
FREDERICK A LOWENHEIM 209 637 West 7th Street Plainfield | 115 |
Copyright | |
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Å/min alloys Amorphous anode Appl argon atoms bias cathode Chem chemical coatings composition compounds current density deposition rate dielectric discharge power effect electric Electrochem electron electroplating energy Epitaxial etch rate etchants etching processes film deposition flow rate GaAs gases glow discharge polymerization H₂ H₂O heating HNO3 increase ion beam deposition ion source ionization layer magnetic field magnetron mask metal mTorr N₂ nitride O₂ operation oxide photoresist Phys planar plasma plasma etching plating PM sputtering polishing polymer polymer deposition potential power density pressure Proc produce ratio reactants reaction reactive sputtering reactor Section semiconductor shown in Fig silicon silicon nitride SiO2 solution species sputter deposition Sputter Gun sputtering yield starting material stoichiometry substrate susceptor target surface techniques Technol temperature thermal thickness Thin Film Thin Solid Films tion U.S. Patent uniform vacuum vapor voltage wafer York µm/min