Thin Film Processes, Volume 1John L. Vossen, Werner Kern Remarkable advances have been made in recent years in the science and technology of thin film processes for deposition and etching. It is the purpose of this book to bring together tutorial reviews of selected filmdeposition and etching processes from a process viewpoint. Emphasis is placed on the practical use of the processes to provide working guidelines for their implementation, a guide to the literature, and an overview of each process. |
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Page 251
... ratio " ( Al1⁄2O1⁄2 / 2Al ) of 1.89 . This ratio is never ob- served ; it seldom exceeds about 1.60 . The ratio is lower for Al alloys than for pure metal . Anodic oxide coatings on Al may be of two main III - 1 . DEPOSITION OF ...
... ratio " ( Al1⁄2O1⁄2 / 2Al ) of 1.89 . This ratio is never ob- served ; it seldom exceeds about 1.60 . The ratio is lower for Al alloys than for pure metal . Anodic oxide coatings on Al may be of two main III - 1 . DEPOSITION OF ...
Page 303
... ratio must be progressively in- creased with the temperature . For example , at 475 ° C , an O2 / SiH , ratio of at least 14 : 1 is required . Larger ratios of up to 33 : 1 cause no change , but ratios beyond this limit inhibit the ...
... ratio must be progressively in- creased with the temperature . For example , at 475 ° C , an O2 / SiH , ratio of at least 14 : 1 is required . Larger ratios of up to 33 : 1 cause no change , but ratios beyond this limit inhibit the ...
Page 376
... ratio depends on the ratio of the volume occupied by discharge to the total volume . 2. Relative Position of Energy - Input and Polymer Deposition In glow discharge polymerization which utilizes internal electrodes , either the ...
... ratio depends on the ratio of the volume occupied by discharge to the total volume . 2. Relative Position of Energy - Input and Polymer Deposition In glow discharge polymerization which utilizes internal electrodes , either the ...
Contents
J J CUOMO 11 IBM Thomas J Watson Research Center Yorktown | 11 |
ix | 75 |
FREDERICK A LOWENHEIM 209 637 West 7th Street Plainfield | 115 |
Copyright | |
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Å/min alloys Amorphous anode Appl argon atoms bias cathode Chem chemical coatings composition compounds current density deposition rate dielectric discharge power effect electric Electrochem electron electroplating energy Epitaxial etch rate etchants etching processes film deposition flow rate GaAs gases glow discharge polymerization H₂ H₂O heating HNO3 increase ion beam deposition ion source ionization layer magnetic field magnetron mask metal mTorr N₂ nitride O₂ operation oxide photoresist Phys planar plasma plasma etching plating PM sputtering polishing polymer polymer deposition potential power density pressure Proc produce ratio reactants reaction reactive sputtering reactor Section semiconductor shown in Fig silicon silicon nitride SiO2 solution species sputter deposition Sputter Gun sputtering yield starting material stoichiometry substrate susceptor target surface techniques Technol temperature thermal thickness Thin Film Thin Solid Films tion U.S. Patent uniform vacuum vapor voltage wafer York µm/min