Thin Film Processes, Volume 1John L. Vossen, Werner Kern Remarkable advances have been made in recent years in the science and technology of thin film processes for deposition and etching. It is the purpose of this book to bring together tutorial reviews of selected filmdeposition and etching processes from a process viewpoint. Emphasis is placed on the practical use of the processes to provide working guidelines for their implementation, a guide to the literature, and an overview of each process. |
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Page 281
... reactor , and exhaust configura- tion . Several types of CVD systems based on horizontal displacement flow reactors are commercially available . A schematic of the basic system is shown in Fig . 9a . 3. Rotary Vertical Batch Reactors In ...
... reactor , and exhaust configura- tion . Several types of CVD systems based on horizontal displacement flow reactors are commercially available . A schematic of the basic system is shown in Fig . 9a . 3. Rotary Vertical Batch Reactors In ...
Page 285
John L. Vossen, Werner Kern. Table III Operating Characteristics of Some Commercial Reactors for Silicon Epitaxy Reactor type Capacity 7.5 - cm diam . Line power ( kW ) H2 flow Vol % SiCl at 1200 ° C ( standard in H2 Growth rate ( um ...
John L. Vossen, Werner Kern. Table III Operating Characteristics of Some Commercial Reactors for Silicon Epitaxy Reactor type Capacity 7.5 - cm diam . Line power ( kW ) H2 flow Vol % SiCl at 1200 ° C ( standard in H2 Growth rate ( um ...
Page 287
... reactor wall deposits , which can lead to particulates on wafers . Atmospheric - pressure reactors are usually built to avoid the problem by cooling the walls sufficiently and using very high flows of main stream carrier gas so that ...
... reactor wall deposits , which can lead to particulates on wafers . Atmospheric - pressure reactors are usually built to avoid the problem by cooling the walls sufficiently and using very high flows of main stream carrier gas so that ...
Contents
J J CUOMO 11 IBM Thomas J Watson Research Center Yorktown | 11 |
Glow Discharges | 24 |
Equipment Configuration | 31 |
Copyright | |
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Å/min alloys Amorphous anode Appl applications argon atoms bias cathode Chem chemical coatings composition compounds current density deposition rate dielectric discharge power effect electric Electrochem electron electroplating energy Epitaxial etch rate etchants etching processes film deposition flow rate GaAs gases glow discharge polymerization H₂ H₂O heating HNO3 increase ion beam deposition ion source ionization Kern layer magnetic field magnetron mask metal mTorr N₂ nitride O₂ operation oxide photoresist Phys planar plasma plasma etching plating PM sputtering polishing polymer polymer deposition potential pressure Proc produce ratio reactants reaction reactive sputtering reactor Section semiconductor shown in Fig silicon silicon nitride SiO2 solution species sputter deposition Sputter Gun sputtering yield starting material stoichiometry substrate susceptor target surface techniques Technol temperature thermal thickness Thin Film Thin Solid Films tion U.S. Patent uniform vacuum vapor voltage wafer York