Thin Film Processes, Volume 1John L. Vossen, Werner Kern Remarkable advances have been made in recent years in the science and technology of thin film processes for deposition and etching. It is the purpose of this book to bring together tutorial reviews of selected filmdeposition and etching processes from a process viewpoint. Emphasis is placed on the practical use of the processes to provide working guidelines for their implementation, a guide to the literature, and an overview of each process. |
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Page 211
... reducing agent dissolved in a second solution ; the two solutions are mixed just before using , or are sprayed from a two - nozzle gun on the surface to be silvered . The Brashear formula has been a standard for many years [ 2–4 ] . The ...
... reducing agent dissolved in a second solution ; the two solutions are mixed just before using , or are sprayed from a two - nozzle gun on the surface to be silvered . The Brashear formula has been a standard for many years [ 2–4 ] . The ...
Page 212
... reducing agents . Most of these have been super- seded by " electroless copper , " which is considered in a later section . 3. Gold Gold films are used for decorative purposes , as well as for optical fil- ters for making transparent ...
... reducing agents . Most of these have been super- seded by " electroless copper , " which is considered in a later section . 3. Gold Gold films are used for decorative purposes , as well as for optical fil- ters for making transparent ...
Page 220
... reducing agent , often a stannous compound , on the surface ; nucleation : the preplating step in which a catalytic material , often a Pd ( but ... reduced to colloidal Pd , which is stabilized by the Sn ( 220 FREDERICK A. LOWENHEIM.
... reducing agent , often a stannous compound , on the surface ; nucleation : the preplating step in which a catalytic material , often a Pd ( but ... reduced to colloidal Pd , which is stabilized by the Sn ( 220 FREDERICK A. LOWENHEIM.
Contents
J J CUOMO 11 IBM Thomas J Watson Research Center Yorktown | 11 |
ix | 75 |
FREDERICK A LOWENHEIM 209 637 West 7th Street Plainfield | 115 |
Copyright | |
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Å/min alloys Amorphous anode Appl argon atoms bias cathode Chem chemical coatings composition compounds current density deposition rate dielectric discharge power effect electric Electrochem electron electroplating energy Epitaxial etch rate etchants etching processes film deposition flow rate GaAs gases glow discharge polymerization H₂ H₂O heating HNO3 increase ion beam deposition ion source ionization layer magnetic field magnetron mask metal mTorr N₂ nitride O₂ operation oxide photoresist Phys planar plasma plasma etching plating PM sputtering polishing polymer polymer deposition potential power density pressure Proc produce ratio reactants reaction reactive sputtering reactor Section semiconductor shown in Fig silicon silicon nitride SiO2 solution species sputter deposition Sputter Gun sputtering yield starting material stoichiometry substrate susceptor target surface techniques Technol temperature thermal thickness Thin Film Thin Solid Films tion U.S. Patent uniform vacuum vapor voltage wafer York µm/min