Thin Film Processes, Volume 1John L. Vossen, Werner Kern Remarkable advances have been made in recent years in the science and technology of thin film processes for deposition and etching. It is the purpose of this book to bring together tutorial reviews of selected filmdeposition and etching processes from a process viewpoint. Emphasis is placed on the practical use of the processes to provide working guidelines for their implementation, a guide to the literature, and an overview of each process. |
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Page 343
... Silicon nitride " produced via plasma is quite unlike silicon nitride produced by conventional chemical or physical vapor deposition tech- niques . In the latter case , the stoichiometry is virtually assured to be Si3N4 , while in the ...
... Silicon nitride " produced via plasma is quite unlike silicon nitride produced by conventional chemical or physical vapor deposition tech- niques . In the latter case , the stoichiometry is virtually assured to be Si3N4 , while in the ...
Page 344
... silicon nitride " film has a compositional nature of SiNьOx- HC2 , where indeed x , y , and z may be very small numbers and a and b are not necessarily 3 and 4 , respectively . A similar argument for departure from ideal stoichiometry ...
... silicon nitride " film has a compositional nature of SiNьOx- HC2 , where indeed x , y , and z may be very small numbers and a and b are not necessarily 3 and 4 , respectively . A similar argument for departure from ideal stoichiometry ...
Page 353
... silicon nitride films . 2. Silicon Oxynitride Nitrogen atoms may be included into an SiO , network by such plasma processes as coreaction of SiH4 + NO + NH3 , or reactively evaporating SiO with an ionized plasma of nitrogen [ 35 ] ...
... silicon nitride films . 2. Silicon Oxynitride Nitrogen atoms may be included into an SiO , network by such plasma processes as coreaction of SiH4 + NO + NH3 , or reactively evaporating SiO with an ionized plasma of nitrogen [ 35 ] ...
Contents
J J CUOMO 11 IBM Thomas J Watson Research Center Yorktown | 11 |
ix | 75 |
FREDERICK A LOWENHEIM 209 637 West 7th Street Plainfield | 115 |
Copyright | |
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Å/min alloys Amorphous anode Appl argon atoms bias cathode Chem chemical coatings composition compounds current density deposition rate dielectric discharge power effect electric Electrochem electron electroplating energy Epitaxial etch rate etchants etching processes film deposition flow rate GaAs gases glow discharge polymerization H₂ H₂O heating HNO3 increase ion beam deposition ion source ionization layer magnetic field magnetron mask metal mTorr N₂ nitride O₂ operation oxide photoresist Phys planar plasma plasma etching plating PM sputtering polishing polymer polymer deposition potential power density pressure Proc produce ratio reactants reaction reactive sputtering reactor Section semiconductor shown in Fig silicon silicon nitride SiO2 solution species sputter deposition Sputter Gun sputtering yield starting material stoichiometry substrate susceptor target surface techniques Technol temperature thermal thickness Thin Film Thin Solid Films tion U.S. Patent uniform vacuum vapor voltage wafer York µm/min