Thin Film Processes, Volume 1John L. Vossen, Werner Kern Remarkable advances have been made in recent years in the science and technology of thin film processes for deposition and etching. It is the purpose of this book to bring together tutorial reviews of selected filmdeposition and etching processes from a process viewpoint. Emphasis is placed on the practical use of the processes to provide working guidelines for their implementation, a guide to the literature, and an overview of each process. |
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Page 26
... space charge as a function of distance from cathode to anode . Adjacent to the cathode , there is a brilliant lumi ... space which is very well defined . Since the electrons rapidly lose their energy by collisions , nearly all of the ...
... space charge as a function of distance from cathode to anode . Adjacent to the cathode , there is a brilliant lumi ... space which is very well defined . Since the electrons rapidly lose their energy by collisions , nearly all of the ...
Page 27
... SPACE DARK VOLTAGE NET SPACE CHARGE | NEGATIVE GLOW Fig . 5. Luminous regions , voltage and net space charge versus position in a dc glow dis- charge . higher voltages must be applied to make up for the ions that would have been ...
... SPACE DARK VOLTAGE NET SPACE CHARGE | NEGATIVE GLOW Fig . 5. Luminous regions , voltage and net space charge versus position in a dc glow dis- charge . higher voltages must be applied to make up for the ions that would have been ...
Page 200
... Space charge repulsion is the most fundamental limit to beam size , be- cause it remains even in a perfect optical system fed by a perfect ion source . Wilson and Brewer [ 76 ] discuss the regimes in which space charge repulsion ...
... Space charge repulsion is the most fundamental limit to beam size , be- cause it remains even in a perfect optical system fed by a perfect ion source . Wilson and Brewer [ 76 ] discuss the regimes in which space charge repulsion ...
Contents
J J CUOMO 11 IBM Thomas J Watson Research Center Yorktown | 11 |
ix | 75 |
FREDERICK A LOWENHEIM 209 637 West 7th Street Plainfield | 115 |
Copyright | |
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Å/min alloys Amorphous anode Appl argon atoms bias cathode Chem chemical coatings composition compounds current density deposition rate dielectric discharge power effect electric Electrochem electron electroplating energy Epitaxial etch rate etchants etching processes film deposition flow rate GaAs gases glow discharge polymerization H₂ H₂O heating HNO3 increase ion beam deposition ion source ionization layer magnetic field magnetron mask metal mTorr N₂ nitride O₂ operation oxide photoresist Phys planar plasma plasma etching plating PM sputtering polishing polymer polymer deposition potential power density pressure Proc produce ratio reactants reaction reactive sputtering reactor Section semiconductor shown in Fig silicon silicon nitride SiO2 solution species sputter deposition Sputter Gun sputtering yield starting material stoichiometry substrate susceptor target surface techniques Technol temperature thermal thickness Thin Film Thin Solid Films tion U.S. Patent uniform vacuum vapor voltage wafer York µm/min