Thin Film Processes, Volume 1John L. Vossen, Werner Kern Remarkable advances have been made in recent years in the science and technology of thin film processes for deposition and etching. It is the purpose of this book to bring together tutorial reviews of selected filmdeposition and etching processes from a process viewpoint. Emphasis is placed on the practical use of the processes to provide working guidelines for their implementation, a guide to the literature, and an overview of each process. |
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Page 23
... stoichiometric oxides , nitrides , sulfides , etc. are desired in the film , it is virtually always required to add O2 , N2 , HS , etc. to the sputtering gas to ensure stoichiometry by reactive sput- tering . In some cases , sputtering ...
... stoichiometric oxides , nitrides , sulfides , etc. are desired in the film , it is virtually always required to add O2 , N2 , HS , etc. to the sputtering gas to ensure stoichiometry by reactive sput- tering . In some cases , sputtering ...
Page 60
... Stoichiometry of Films The stoichiometry of films deposited from multicomponent targets when a substrate bias is applied has been addressed by a number of work- ers [ 83 , 84 , 92 , 96a , 477 , 483 , 489-491 ] . Most of these treatments ...
... Stoichiometry of Films The stoichiometry of films deposited from multicomponent targets when a substrate bias is applied has been addressed by a number of work- ers [ 83 , 84 , 92 , 96a , 477 , 483 , 489-491 ] . Most of these treatments ...
Page 343
... stoichiometry is virtually assured to be Si3N4 , while in the former process the stoichiometry ( Si / N ratio ) can be controllably varied depending on ratios of entrant reactant gas flows , power level , substrate temperature during ...
... stoichiometry is virtually assured to be Si3N4 , while in the former process the stoichiometry ( Si / N ratio ) can be controllably varied depending on ratios of entrant reactant gas flows , power level , substrate temperature during ...
Contents
J J CUOMO 11 IBM Thomas J Watson Research Center Yorktown | 11 |
ix | 75 |
FREDERICK A LOWENHEIM 209 637 West 7th Street Plainfield | 115 |
Copyright | |
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Å/min alloys Amorphous anode Appl argon atoms bias cathode Chem chemical coatings composition compounds current density deposition rate dielectric discharge power effect electric Electrochem electron electroplating energy Epitaxial etch rate etchants etching processes film deposition flow rate GaAs gases glow discharge polymerization H₂ H₂O heating HNO3 increase ion beam deposition ion source ionization layer magnetic field magnetron mask metal mTorr N₂ nitride O₂ operation oxide photoresist Phys planar plasma plasma etching plating PM sputtering polishing polymer polymer deposition potential power density pressure Proc produce ratio reactants reaction reactive sputtering reactor Section semiconductor shown in Fig silicon silicon nitride SiO2 solution species sputter deposition Sputter Gun sputtering yield starting material stoichiometry substrate susceptor target surface techniques Technol temperature thermal thickness Thin Film Thin Solid Films tion U.S. Patent uniform vacuum vapor voltage wafer York µm/min