Thin Film Processes, Volume 1John L. Vossen, Werner Kern Remarkable advances have been made in recent years in the science and technology of thin film processes for deposition and etching. It is the purpose of this book to bring together tutorial reviews of selected filmdeposition and etching processes from a process viewpoint. Emphasis is placed on the practical use of the processes to provide working guidelines for their implementation, a guide to the literature, and an overview of each process. |
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Page 106
... structure may be suppressed by ion bombardment yielding a Zone T - like structure [ 109 , 110 ] . Thin films also exhibit the general characteristics of the zone model . Coatings of a number of metals ( Al , Ti , V , Cr , Ni , Cu , Zr ...
... structure may be suppressed by ion bombardment yielding a Zone T - like structure [ 109 , 110 ] . Thin films also exhibit the general characteristics of the zone model . Coatings of a number of metals ( Al , Ti , V , Cr , Ni , Cu , Zr ...
Page 202
... structure C films de- posited at 50 eV , with no oxygen or metals detected . Simultaneous sput- tering of the film by the inert gas may help clean the surface of loosely bound impurities , similar to bias sputtering . 3. Structure and ...
... structure C films de- posited at 50 eV , with no oxygen or metals detected . Simultaneous sput- tering of the film by the inert gas may help clean the surface of loosely bound impurities , similar to bias sputtering . 3. Structure and ...
Page 363
... structure of a monomer and also on the conditions of the glow discharge . In contrast to conventional polymerization — i.e . , molecular polymer- ization - polymer formation in glow discharge may be characterized as elemental or atomic ...
... structure of a monomer and also on the conditions of the glow discharge . In contrast to conventional polymerization — i.e . , molecular polymer- ization - polymer formation in glow discharge may be characterized as elemental or atomic ...
Contents
J J CUOMO 11 IBM Thomas J Watson Research Center Yorktown | 11 |
ix | 75 |
FREDERICK A LOWENHEIM 209 637 West 7th Street Plainfield | 115 |
Copyright | |
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Å/min alloys Amorphous anode Appl argon atoms bias cathode Chem chemical coatings composition compounds current density deposition rate dielectric discharge power effect electric Electrochem electron electroplating energy Epitaxial etch rate etchants etching processes film deposition flow rate GaAs gases glow discharge polymerization H₂ H₂O heating HNO3 increase ion beam deposition ion source ionization layer magnetic field magnetron mask metal mTorr N₂ nitride O₂ operation oxide photoresist Phys planar plasma plasma etching plating PM sputtering polishing polymer polymer deposition potential power density pressure Proc produce ratio reactants reaction reactive sputtering reactor Section semiconductor shown in Fig silicon silicon nitride SiO2 solution species sputter deposition Sputter Gun sputtering yield starting material stoichiometry substrate susceptor target surface techniques Technol temperature thermal thickness Thin Film Thin Solid Films tion U.S. Patent uniform vacuum vapor voltage wafer York µm/min