Thin Film Processes, Volume 1John L. Vossen, Werner Kern Remarkable advances have been made in recent years in the science and technology of thin film processes for deposition and etching. It is the purpose of this book to bring together tutorial reviews of selected filmdeposition and etching processes from a process viewpoint. Emphasis is placed on the practical use of the processes to provide working guidelines for their implementation, a guide to the literature, and an overview of each process. |
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Page 219
... techniques , was perhaps the earliest application of electroplating . Until about 1960 these techniques relied on making the nonconductor electrically conductive by means of metallic paints , rubbing with graphite , or " silvering ...
... techniques , was perhaps the earliest application of electroplating . Until about 1960 these techniques relied on making the nonconductor electrically conductive by means of metallic paints , rubbing with graphite , or " silvering ...
Page 497
... techniques . Improved lithographic techniques have permitted a reduction in feature size in photo and electron sensitive re- sists into a range where conventional liquid phase chemical etching is no longer a viable means of pattern ...
... techniques . Improved lithographic techniques have permitted a reduction in feature size in photo and electron sensitive re- sists into a range where conventional liquid phase chemical etching is no longer a viable means of pattern ...
Page 548
... techniques have been devised to taper profiles in wet etching and some of these are applicable to plasma etching . In particular , the surface of the film to be etched can be altered to produce a faster etching region either by altering ...
... techniques have been devised to taper profiles in wet etching and some of these are applicable to plasma etching . In particular , the surface of the film to be etched can be altered to produce a faster etching region either by altering ...
Contents
J J CUOMO 11 IBM Thomas J Watson Research Center Yorktown | 11 |
ix | 75 |
FREDERICK A LOWENHEIM 209 637 West 7th Street Plainfield | 115 |
Copyright | |
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Å/min alloys Amorphous anode Appl argon atoms bias cathode Chem chemical coatings composition compounds current density deposition rate dielectric discharge power effect electric Electrochem electron electroplating energy Epitaxial etch rate etchants etching processes film deposition flow rate GaAs gases glow discharge polymerization H₂ H₂O heating HNO3 increase ion beam deposition ion source ionization layer magnetic field magnetron mask metal mTorr N₂ nitride O₂ operation oxide photoresist Phys planar plasma plasma etching plating PM sputtering polishing polymer polymer deposition potential power density pressure Proc produce ratio reactants reaction reactive sputtering reactor Section semiconductor shown in Fig silicon silicon nitride SiO2 solution species sputter deposition Sputter Gun sputtering yield starting material stoichiometry substrate susceptor target surface techniques Technol temperature thermal thickness Thin Film Thin Solid Films tion U.S. Patent uniform vacuum vapor voltage wafer York µm/min