Thin Film Processes, Volume 1John L. Vossen, Werner Kern Remarkable advances have been made in recent years in the science and technology of thin film processes for deposition and etching. It is the purpose of this book to bring together tutorial reviews of selected filmdeposition and etching processes from a process viewpoint. Emphasis is placed on the practical use of the processes to provide working guidelines for their implementation, a guide to the literature, and an overview of each process. |
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Page 279
... Temperature CVD Reactors * Reactors of this type are used where temperature limitations of the substrate require relatively low temperatures of deposition . Primary ap- plications are in semiconductor device processing , where CVD has ...
... Temperature CVD Reactors * Reactors of this type are used where temperature limitations of the substrate require relatively low temperatures of deposition . Primary ap- plications are in semiconductor device processing , where CVD has ...
Page 291
... temperature ( 800 ° C ) is possible by reacting SiBr with CO2 [ 96 ] , expressed by the simplified overall reaction equation SiBr , + 2CO2 + 2H2 - SiO2 + 2CO + 4HBr . The analogous reactions with SiCl , proceed at temperatures at and ...
... temperature ( 800 ° C ) is possible by reacting SiBr with CO2 [ 96 ] , expressed by the simplified overall reaction equation SiBr , + 2CO2 + 2H2 - SiO2 + 2CO + 4HBr . The analogous reactions with SiCl , proceed at temperatures at and ...
Page 303
... temperature is increased to 310 ° C , and very gradually as it is further increased to 450 ° C . To attain an increase in the maximum depo- sition rate with temperature , the O2 / SiH , ratio must be progressively in- creased with the ...
... temperature is increased to 310 ° C , and very gradually as it is further increased to 450 ° C . To attain an increase in the maximum depo- sition rate with temperature , the O2 / SiH , ratio must be progressively in- creased with the ...
Contents
J J CUOMO 11 IBM Thomas J Watson Research Center Yorktown | 11 |
ix | 75 |
FREDERICK A LOWENHEIM 209 637 West 7th Street Plainfield | 115 |
Copyright | |
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Å/min alloys Amorphous anode Appl argon atoms bias cathode Chem chemical coatings composition compounds current density deposition rate dielectric discharge power effect electric Electrochem electron electroplating energy Epitaxial etch rate etchants etching processes film deposition flow rate GaAs gases glow discharge polymerization H₂ H₂O heating HNO3 increase ion beam deposition ion source ionization layer magnetic field magnetron mask metal mTorr N₂ nitride O₂ operation oxide photoresist Phys planar plasma plasma etching plating PM sputtering polishing polymer polymer deposition potential power density pressure Proc produce ratio reactants reaction reactive sputtering reactor Section semiconductor shown in Fig silicon silicon nitride SiO2 solution species sputter deposition Sputter Gun sputtering yield starting material stoichiometry substrate susceptor target surface techniques Technol temperature thermal thickness Thin Film Thin Solid Films tion U.S. Patent uniform vacuum vapor voltage wafer York µm/min