Thin Film Processes, Volume 1John L. Vossen, Werner Kern Remarkable advances have been made in recent years in the science and technology of thin film processes for deposition and etching. It is the purpose of this book to bring together tutorial reviews of selected filmdeposition and etching processes from a process viewpoint. Emphasis is placed on the practical use of the processes to provide working guidelines for their implementation, a guide to the literature, and an overview of each process. |
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Page 362
... tion . The recognition of thin film formation by glow discharge polymeriza- tion can be traced back to 1874 [ 1 , 2 ] . However , in most cases the poly- mers were considered as by - products of an electric discharge [ 3–9 ] and ...
... tion . The recognition of thin film formation by glow discharge polymeriza- tion can be traced back to 1874 [ 1 , 2 ] . However , in most cases the poly- mers were considered as by - products of an electric discharge [ 3–9 ] and ...
Page 414
... tion , film density , residual stress , defect density , and microstructure . The etch rate generally decreases as the density or crystallinity of a material increases . As in all etching processes , selectivity is one of the most ...
... tion , film density , residual stress , defect density , and microstructure . The etch rate generally decreases as the density or crystallinity of a material increases . As in all etching processes , selectivity is one of the most ...
Page 559
... tion , 249-251 fused salt electrolysis , 250-251 organic electrolyte , 249-250 Electroless plating , see ... tion , 288-289 Gas incorporation , in sputtered films , 58- 60 Germanium chemical etching , 424-430 , 441-442 , 450 by chemical ...
... tion , 249-251 fused salt electrolysis , 250-251 organic electrolyte , 249-250 Electroless plating , see ... tion , 288-289 Gas incorporation , in sputtered films , 58- 60 Germanium chemical etching , 424-430 , 441-442 , 450 by chemical ...
Contents
J J CUOMO 11 IBM Thomas J Watson Research Center Yorktown | 11 |
ix | 75 |
FREDERICK A LOWENHEIM 209 637 West 7th Street Plainfield | 115 |
Copyright | |
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Å/min alloys Amorphous anode Appl argon atoms bias cathode Chem chemical coatings composition compounds current density deposition rate dielectric discharge power effect electric Electrochem electron electroplating energy Epitaxial etch rate etchants etching processes film deposition flow rate GaAs gases glow discharge polymerization H₂ H₂O heating HNO3 increase ion beam deposition ion source ionization layer magnetic field magnetron mask metal mTorr N₂ nitride O₂ operation oxide photoresist Phys planar plasma plasma etching plating PM sputtering polishing polymer polymer deposition potential power density pressure Proc produce ratio reactants reaction reactive sputtering reactor Section semiconductor shown in Fig silicon silicon nitride SiO2 solution species sputter deposition Sputter Gun sputtering yield starting material stoichiometry substrate susceptor target surface techniques Technol temperature thermal thickness Thin Film Thin Solid Films tion U.S. Patent uniform vacuum vapor voltage wafer York µm/min