Thin Film Processes, Volume 1John L. Vossen, Werner Kern Remarkable advances have been made in recent years in the science and technology of thin film processes for deposition and etching. It is the purpose of this book to bring together tutorial reviews of selected filmdeposition and etching processes from a process viewpoint. Emphasis is placed on the practical use of the processes to provide working guidelines for their implementation, a guide to the literature, and an overview of each process. |
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Page 76
... typical planar diode ( see Chapter II - 1 , Sections III and IV ) . A low pressure abnormal negative glow discharge [ 1 , 2 ] is maintained be- tween the cathode ( target ) and an adjacent anode ( substrate mounting table ) . Electrons ...
... typical planar diode ( see Chapter II - 1 , Sections III and IV ) . A low pressure abnormal negative glow discharge [ 1 , 2 ] is maintained be- tween the cathode ( target ) and an adjacent anode ( substrate mounting table ) . Electrons ...
Page 288
... typically ± 2 % of the full scale . They can be calibrated in either volume or mass units ( e.g. , liter / min or g / min ) . A schematic of a typical gas flow control system used in conjunction with low - temperature CVD of SiO2 and ...
... typically ± 2 % of the full scale . They can be calibrated in either volume or mass units ( e.g. , liter / min or g / min ) . A schematic of a typical gas flow control system used in conjunction with low - temperature CVD of SiO2 and ...
Page 369
... Typical combinations of discharge modes and reactor design are shown schematically in Fig . 2 . The use of internal ... typical conditions , polymer deposition occurs mainly onto the electrode surface . With a high frequency ( rf range ) ...
... Typical combinations of discharge modes and reactor design are shown schematically in Fig . 2 . The use of internal ... typical conditions , polymer deposition occurs mainly onto the electrode surface . With a high frequency ( rf range ) ...
Contents
J J CUOMO 11 IBM Thomas J Watson Research Center Yorktown | 11 |
ix | 75 |
FREDERICK A LOWENHEIM 209 637 West 7th Street Plainfield | 115 |
Copyright | |
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Å/min alloys Amorphous anode Appl argon atoms bias cathode Chem chemical coatings composition compounds current density deposition rate dielectric discharge power effect electric Electrochem electron electroplating energy Epitaxial etch rate etchants etching processes film deposition flow rate GaAs gases glow discharge polymerization H₂ H₂O heating HNO3 increase ion beam deposition ion source ionization layer magnetic field magnetron mask metal mTorr N₂ nitride O₂ operation oxide photoresist Phys planar plasma plasma etching plating PM sputtering polishing polymer polymer deposition potential power density pressure Proc produce ratio reactants reaction reactive sputtering reactor Section semiconductor shown in Fig silicon silicon nitride SiO2 solution species sputter deposition Sputter Gun sputtering yield starting material stoichiometry substrate susceptor target surface techniques Technol temperature thermal thickness Thin Film Thin Solid Films tion U.S. Patent uniform vacuum vapor voltage wafer York µm/min