Thin Film Processes, Volume 1John L. Vossen, Werner Kern Remarkable advances have been made in recent years in the science and technology of thin film processes for deposition and etching. It is the purpose of this book to bring together tutorial reviews of selected filmdeposition and etching processes from a process viewpoint. Emphasis is placed on the practical use of the processes to provide working guidelines for their implementation, a guide to the literature, and an overview of each process. |
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Page 28
... voltage [ 120 ] . Second , the electrodes are no longer required to be electrical conductors since rf voltages can be coupled through any kind of impedance . Thus , it is literally possible to sputter anything . However , this does not ...
... voltage [ 120 ] . Second , the electrodes are no longer required to be electrical conductors since rf voltages can be coupled through any kind of impedance . Thus , it is literally possible to sputter anything . However , this does not ...
Page 161
... voltage control until an adjustable upper limit is reached - then constant - current control ; and meters for output voltage and current . Useful optional features would in- clude : panel control settings for maximum ( controlled ) ...
... voltage control until an adjustable upper limit is reached - then constant - current control ; and meters for output voltage and current . Useful optional features would in- clude : panel control settings for maximum ( controlled ) ...
Page 183
... voltage and with decreased spacing between the plasma boundary and extraction electrode . For nonplanar geometries only the proportionality constant changes in Child's law , thus a given geo- metry may be characterized by the ratio j ...
... voltage and with decreased spacing between the plasma boundary and extraction electrode . For nonplanar geometries only the proportionality constant changes in Child's law , thus a given geo- metry may be characterized by the ratio j ...
Contents
J J CUOMO 11 IBM Thomas J Watson Research Center Yorktown | 11 |
ix | 75 |
FREDERICK A LOWENHEIM 209 637 West 7th Street Plainfield | 115 |
Copyright | |
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Å/min alloys Amorphous anode Appl argon atoms bias cathode Chem chemical coatings composition compounds current density deposition rate dielectric discharge power effect electric Electrochem electron electroplating energy Epitaxial etch rate etchants etching processes film deposition flow rate GaAs gases glow discharge polymerization H₂ H₂O heating HNO3 increase ion beam deposition ion source ionization layer magnetic field magnetron mask metal mTorr N₂ nitride O₂ operation oxide photoresist Phys planar plasma plasma etching plating PM sputtering polishing polymer polymer deposition potential power density pressure Proc produce ratio reactants reaction reactive sputtering reactor Section semiconductor shown in Fig silicon silicon nitride SiO2 solution species sputter deposition Sputter Gun sputtering yield starting material stoichiometry substrate susceptor target surface techniques Technol temperature thermal thickness Thin Film Thin Solid Films tion U.S. Patent uniform vacuum vapor voltage wafer York µm/min