Thin Film Processes, Volume 1John L. Vossen, Werner Kern Remarkable advances have been made in recent years in the science and technology of thin film processes for deposition and etching. It is the purpose of this book to bring together tutorial reviews of selected filmdeposition and etching processes from a process viewpoint. Emphasis is placed on the practical use of the processes to provide working guidelines for their implementation, a guide to the literature, and an overview of each process. |
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Page 286
... wafer throughput . The uniform temperatures inherent in a tubular resistance - heated furnace , combined with the very high packing density possible with stand - up closely packed wafer loading , make this a very attractive approach . A ...
... wafer throughput . The uniform temperatures inherent in a tubular resistance - heated furnace , combined with the very high packing density possible with stand - up closely packed wafer loading , make this a very attractive approach . A ...
Page 439
... wafers > 200 - μm thick ; 4 liter / min CO2 bubble stream in illumin . Teflon appl . wafer rotates 8 r / min , on / off 2 : 1 ( 100 ) Si , 0.25 - mm thick wafers For bulk thinning , followed by ( b ) For final thinning Si power device ...
... wafers > 200 - μm thick ; 4 liter / min CO2 bubble stream in illumin . Teflon appl . wafer rotates 8 r / min , on / off 2 : 1 ( 100 ) Si , 0.25 - mm thick wafers For bulk thinning , followed by ( b ) For final thinning Si power device ...
Page 508
... wafer to wafer or across a single wafer . With no stringent requirements on uniformity , the tube - type reactor is a natural choice for resist stripping since the vertical loading arrangement allows for the highest density of material ...
... wafer to wafer or across a single wafer . With no stringent requirements on uniformity , the tube - type reactor is a natural choice for resist stripping since the vertical loading arrangement allows for the highest density of material ...
Contents
J J CUOMO 11 IBM Thomas J Watson Research Center Yorktown | 11 |
ix | 75 |
FREDERICK A LOWENHEIM 209 637 West 7th Street Plainfield | 115 |
Copyright | |
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Å/min alloys Amorphous anode Appl argon atoms bias cathode Chem chemical coatings composition compounds current density deposition rate dielectric discharge power effect electric Electrochem electron electroplating energy Epitaxial etch rate etchants etching processes film deposition flow rate GaAs gases glow discharge polymerization H₂ H₂O heating HNO3 increase ion beam deposition ion source ionization layer magnetic field magnetron mask metal mTorr N₂ nitride O₂ operation oxide photoresist Phys planar plasma plasma etching plating PM sputtering polishing polymer polymer deposition potential power density pressure Proc produce ratio reactants reaction reactive sputtering reactor Section semiconductor shown in Fig silicon silicon nitride SiO2 solution species sputter deposition Sputter Gun sputtering yield starting material stoichiometry substrate susceptor target surface techniques Technol temperature thermal thickness Thin Film Thin Solid Films tion U.S. Patent uniform vacuum vapor voltage wafer York µm/min