Proceedings: ISTFA, International Symposium for Testing and Failure Analysis

25th International Symposium applications backside barrier metal beam current bias bondpad burn-in burn-in uA cell chip CMOS corrosion cracks cross-sectional damage defect deposition device dielectric dose edge effect electrical electromigration electron etching failing Failure Analysis fault FIB system film flip-chip Focused Ion Beam function fuse GaAs gate oxide IDDQ illuminated image increase infrared integrated circuit interconnect ISTFA laser layer leakage light emission material measured mechanism MESFET metal method microscope nitride nodes observed ohmic contact optical output package pads parameters pattern performed photon polishing polysilicon probe pulse region reliability resistance resistor sample Santa Clara scanning semiconductor shown in Figure shows signal specimen spectra SRAM stress structure stuck-at stuck-at faults surface Symposium for Testing technique temperature tester Testing and Failure thermal thickness thin tool transistor typical vector void voltage wafer waveform wavelength