Semiconductor Devices and Integrated ElectronicsFor some time there has been a need for a semiconductor device book that carries diode and transistor theory beyond an introductory level and yet has space to touch on a wider range of semiconductor device principles and applica tions. Such topics are covered in specialized monographs numbering many hun dreds, but the voluminous nature of this literature limits access for students. This book is the outcome of attempts to develop a broad course on devices and integrated electronics for university students at about senior-year level. The edu cational prerequisites are an introductory course in semiconductor junction and transistor concepts, and a course on analog and digital circuits that has intro duced the concepts of rectification, amplification, oscillators, modulation and logic and SWitching circuits. The book should also be of value to professional engineers and physicists because of both, the information included and the de tailed guide to the literature given by the references. The aim has been to bring some measure of order into the subject area examined and to provide a basic structure from which teachers may develop themes that are of most interest to students and themselves. Semiconductor devices and integrated circuits are reviewed and fundamental factors that control power levels, frequency, speed, size and cost are discussed. The text also briefly mentions how devices are used and presents circuits and comments on representative applications. Thus, the book seeks a balance be tween the extremes of device physics and circuit design. |
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Page 26
... phonon involved in the collision process and lop is the mean free path for scattering by optical phonons and & is the field strength , then in a simple approach that neglects the main complexities of the problem " the electron effective ...
... phonon involved in the collision process and lop is the mean free path for scattering by optical phonons and & is the field strength , then in a simple approach that neglects the main complexities of the problem " the electron effective ...
Page 33
... phonon cooperation is needed . However , all Si crystals contain some degree of imper- fection either as missing or displaced Si atoms or inclusion of impurity atoms such as oxygen , carbon in significant quantities ( 1016-1018 cm 3 ) ...
... phonon cooperation is needed . However , all Si crystals contain some degree of imper- fection either as missing or displaced Si atoms or inclusion of impurity atoms such as oxygen , carbon in significant quantities ( 1016-1018 cm 3 ) ...
Page 892
... phonon scattering and 315π / 512 ( = 1.93 ) for ionized impurity scattering . One application of the Hall effect is the measurement of magnetic field strength . Figure 15.1 ( b ) shows the variation of output voltage with field strength ...
... phonon scattering and 315π / 512 ( = 1.93 ) for ionized impurity scattering . One application of the Hall effect is the measurement of magnetic field strength . Figure 15.1 ( b ) shows the variation of output voltage with field strength ...
Contents
Semiconductor Junctions and Diodes | 1 |
MetalSemiconductor SchottkyBarrier Diodes | 85 |
Microwave Applications of Diodes Varactors | 137 |
Copyright | |
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amplifier Appl applications avalanche bandgap barrier height bias bipolar transistors capacitance capacitor cathode channel characteristics charge charge-coupled devices chip cm² cm³ collector depletion region detector Devices Meeting Technical diffusion Discuss doping drain effect efficiency electric Electron Devices Meeting emission emitter energy epitaxial field frequency GaAs gain gate heterojunction IEEE International Electron IEEE Trans IGFET Impatt Impatt diodes injection input integrated circuit interface International Electron Devices laser layer Lett logic McGraw-Hill Meeting Technical Digest memory metal Microwave minority carrier modulation MOSFET noise optical oscillator output oxide p-n junction p-type parameters permission from IEEE Photovoltaic Phys Proc pulse recombination Reprinted with permission resistance reverse Schottky barrier Schottky diode semiconductor sensor shown in Fig signal silicon SiO2 solar cells Solid-State Circuits Solid-State Electronics structure substrate surface switching temperature thermal thickness thyristor tunnel diode turn-on voltage wavelength York