Semiconductor Devices and Integrated ElectronicsFor some time there has been a need for a semiconductor device book that carries diode and transistor theory beyond an introductory level and yet has space to touch on a wider range of semiconductor device principles and applica tions. Such topics are covered in specialized monographs numbering many hun dreds, but the voluminous nature of this literature limits access for students. This book is the outcome of attempts to develop a broad course on devices and integrated electronics for university students at about senior-year level. The edu cational prerequisites are an introductory course in semiconductor junction and transistor concepts, and a course on analog and digital circuits that has intro duced the concepts of rectification, amplification, oscillators, modulation and logic and SWitching circuits. The book should also be of value to professional engineers and physicists because of both, the information included and the de tailed guide to the literature given by the references. The aim has been to bring some measure of order into the subject area examined and to provide a basic structure from which teachers may develop themes that are of most interest to students and themselves. Semiconductor devices and integrated circuits are reviewed and fundamental factors that control power levels, frequency, speed, size and cost are discussed. The text also briefly mentions how devices are used and presents circuits and comments on representative applications. Thus, the book seeks a balance be tween the extremes of device physics and circuit design. |
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Page 115
... ratio of the minority carrier current to the total current is defined as the ratio ( y ) . This term increases with forward current with the relationship y = ni2J / bND2Jns where ni and ND are the intrinsic and doping concentrations , b ...
... ratio of the minority carrier current to the total current is defined as the ratio ( y ) . This term increases with forward current with the relationship y = ni2J / bND2Jns where ni and ND are the intrinsic and doping concentrations , b ...
Page 493
... ratio of the driver is 5 and for the load is 0.25 then the geometrical beta ratio is 20 and the electrical beta will be comparable in value . The effect of various beta ratios on transfer characteristics is shown in Fig . 8.19 for a p ...
... ratio of the driver is 5 and for the load is 0.25 then the geometrical beta ratio is 20 and the electrical beta will be comparable in value . The effect of various beta ratios on transfer characteristics is shown in Fig . 8.19 for a p ...
Page 612
... ratio and maximum delay achievable in CCDs has been discussed by Tompsett and Zimany.106 Signal - to - noise ratios of the order of 60 dB are obtained for 1000 transfers . The ratio is proportional to the size of the charge packet and ...
... ratio and maximum delay achievable in CCDs has been discussed by Tompsett and Zimany.106 Signal - to - noise ratios of the order of 60 dB are obtained for 1000 transfers . The ratio is proportional to the size of the charge packet and ...
Contents
Semiconductor Junctions and Diodes | 1 |
MetalSemiconductor SchottkyBarrier Diodes | 85 |
Microwave Applications of Diodes Varactors | 137 |
Copyright | |
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amplifier Appl applications avalanche bandgap barrier height bias bipolar transistors capacitance capacitor cathode channel characteristics charge charge-coupled devices chip cm² cm³ collector depletion region detector Devices Meeting Technical diffusion Discuss doping drain effect efficiency electric Electron Devices Meeting emission emitter energy epitaxial field frequency GaAs gain gate heterojunction IEEE International Electron IEEE Trans IGFET Impatt Impatt diodes impedance injection input integrated circuit interface International Electron Devices laser layer Lett logic McGraw-Hill Meeting Technical Digest memory metal Microwave minority carrier modulation MOSFET n-type noise optical oscillator output oxide p-n junction parameters permission from IEEE Photovoltaic Phys Proc pulse recombination Reprinted with permission resistance Schottky barrier Schottky diode semiconductor sensor shown in Fig signal silicon SiO2 solar cells Solid-State Circuits Solid-State Electronics structure substrate surface switching temperature thermal thickness thyristor tunnel diode turn-on voltage wavelength York